SD2941-10W STMicroelectronics

SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features Gold metallization Excellent thermal stability Common source configuration P = 175 W min. with 15 dB gain 175 OUT MHz, 50 V P = 135 W typ. with 14 dB gain 123 MHz, OUT 28 V M174 Epoxy sealed Low R DS(on) Thermally enhanced packaging for lower junction temperatures In compliance with the 2002/95/EC1 European Figure 1. Pin connection directive Description 41 1. Drain The SD2941-10 is a gold metalized N-channel 2. Source MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up 3. Gate to 230 MHz. It offers 25% lower R than the DS(on) 4. Source industry standard, with 20% higher P than SAT 3 2 ST s SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the best-in-clas transistor for ISM applications, where reliability and ruggedness are critical factor. Table 1. Device summary (1) Order code Marking Base qty. Package Packaging (1) SD2941-10W SD2941-10 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. August 2015 DocID11815 Rev 6 1/17 This is information on a product in full production. www.st.comContents SD2941-10 Contents 1 Electrical data 3 1.1 Maximum rating . 3 2 Electrical characteristics . 4 3 Impedance . 6 4 Typical performance . 7 5 Test circuit 10 6 Package information 13 7 Marking, packing and shipping specifications . 15 8 Revision history . 16 2/17 DocID11815 Rev 6