SD56120 STMicroelectronics

SD56120 RF power transistor, the LdmoST family Features Excellent thermal stability Common source configuration Push-pull P = 100 W with 14 dB gain 860 MHz OUT BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power M246 transistor designed for broadband commercial Epoxy sealed and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in Figure 1. Pin connections common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz 12 requiring high linearity. 5 4 1-2 Drain 3 Source 4-5 Gate Table 1. Device summary Order code Package Branding SD56120 M246 SD56120 September 2009 Doc ID 6873 Rev 4 1/15 www.st.com 15 Contents SD56120 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedances 5 4 Typical performances 6 5 Test circuit . 9 6 Package mechanical data 12 7 Revision history . 14 2/15 Doc ID 6873 Rev 4