X-On Electronics has gained recognition as a prominent supplier of SD57045 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. SD57045 RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

SD57045 STMicroelectronics

SD57045 electronic component of STMicroelectronics
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Part No.SD57045
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET N-Ch 65 Volt 5 Amp
Datasheet: SD57045 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 99.71 ea
Line Total: USD 4985.5 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 1
50 : USD 99.71
100 : USD 99.125
250 : USD 98.54
500 : USD 97.955
1000 : USD 97.357
2500 : USD 96.759
3000 : USD 96.161
5000 : USD 95.55
10000 : USD 94.926

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 93.3195
4 : USD 89.8632
10 : USD 86.4069
25 : USD 86.4069
40 : USD 86.4069

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 72.1008
5 : USD 69.8544
10 : USD 69.8544
25 : USD 68.58
50 : USD 67.1868
100 : USD 66.204
250 : USD 66.204
500 : USD 65.6856
1000 : USD 63.1368

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 115.0701
50 : USD 111.4336
100 : USD 108.3685
250 : USD 106.2012

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 113.5796

   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Product Type
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the SD57045 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SD57045 and other electronic components in the RF MOSFET Transistors category and beyond.

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SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 45W WITH 13 dB gain 945 MHz OUT BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION ORDER CODE BRANDING SD57045 SD57045 The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 PIN CONNECTION GHz. The SD57045 is designed for high gain and broadband performance operating in common 1 source mode at 28 V. It is ideal for base station applications requiring high linearity. 3 2 1. Drain 3. Source 2. Gate ABSOLUTE MAXIMUM RATINGS (T = 25C) CASE Symbol Parameter Value Unit V Drain-Source Voltage 65 V (BR)DSS V Drain-Gate Voltage (R = 1 M) 65 V DGR GS V Gate-Source Voltage 20 V GS I Drain Current 5 A D P Power Dissipation ( Tc = 70C) 93 W DISS Tj Max. Operating Junction Temperature 200 C T Storage Temperature -65 to + 200 C STG THERMAL DATA R Junction -Case Thermal Resistance 1.4 C/W th(j-c) November, 19 2002 1/11SD57045 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 1 mA 65 V (BR)DSS GS DS I V = 0 V V = 28 V 1 A DSS GS DS I V = 20 V V = 0 V 1 A GSS GS DS V V = 28 V I = 250 mA 2.5 5.0 V GS(Q) DS D V V = 10 V I = 3 A 0.7 0.9 V DS(ON) GS D G V = 10 V I = 5 A 2.0 2.7 mho FS DS D C V = 0 V V = 28 V f = 1 MHz 80 pF ISS GS DS C V = 0 V V = 28 V f = 1 MHz 40 pF OSS GS DS C V = 0 V V = 28 V f = 1 MHz 3.2 pF RSS GS DS Ref. 7133620B DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 28 V I = 250 mA f = 945 MHz 45 W OUT DD DQ IMD3 V = 28 V I = 250 mA P = 45 W PEP -32 -28 dBc DD DQ OUT G V = 28 V I = 250 mA P = 45 W PEP 13 15 dB PS DD DQ OUT V = 28 V I = 250 mA P = 45 W PEP 33 40 % D DD DQ OUT Load V = 28 V I = 250 mA P = 45 W f = 945 MHz DD DQ OUT 10:1 VSWR mismatch ALL PHASE ANGLES note: f1 = 945 MHz PEP f = 945.1 MHz 2 IMPEDANCE DATA D Z D Typical Typical Drain Input G Zin S FREQ. Z ()Z () IN DL 925 MHz 1.27 + j 0.82 2.22 -j 1.63 930 MHz 1.21 + j 0.79 2.24 - j 1.61 945 MHz 1.04 + j 0.71 2.30 - j 1.52 960 MHz 0.93 + j 0.43 2.37 - j 1.37 965 MHz 0.91 + j 0.41 2.43 - j 1.36 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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