DocumentNumber:AFT05MS031N FreescaleSemiconductor Rev. 1, 4/2013 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel AFT05MS031NR1 Enhancement--ModeLateral MOSFETs AFT05MS031GNR1 Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications inmobileradioequipment. 136--520MHz,31W,13.6V WIDEBAND TypicalPerformance: (13.6Vdc,T =25 C,CW) A RFPOWERLDMOSTRANSISTORS Frequency G P1dB ps D (MHz) (dB) (%) (W) (1,4) 136--174 23.2 62.0 31 (2,4) 380--450 18.3 64.1 31 (3,4) 450--520 17.7 62.0 31 TO--270--2 (5) 520 17.7 71.4 33 PLASTIC AFT05MS031NR1 LoadMismatch/Ruggedness Signal Frequency P Test in Type VSWR (MHz) (W) Voltage Result (1) 155 CW >65:1 at all 0.55 17 NoDevice PhaseAngles (3dB Overdrive) Degradation TO--270--2 GULL (2) 420 1.6 PLASTIC (3dB Overdrive) AFT05MS031GNR1 (3) 490 2.0 (3dB Overdrive) (5) 520 1.1 (3dB Overdrive) 1. Measured in 136--174 MHz VHFbroadband reference circuit. 2. Measured in 380--450 MHz UHFbroadband reference circuit. 3. Measured in 450--520 MHz UHFbroadband reference circuit. Gate Drain 4. The values shown are the minimum measured performance numbers across the indicatedfrequency range. 5. Measuredin520MHz narrowbandtest circuit. Features Characterizedfor Operationfrom 136to520MHz (Top View) UnmatchedInput andOutput AllowingWideFrequency RangeUtilization Note: The backside of the package is the IntegratedESD Protection sourceterminalforthetransistor. IntegratedStability Enhancements Figure1.PinConnections Wideband Full Power Across theBand: 136--174MHz 380--450MHz 450--520MHz 225C Capable Plastic Package ExceptionalThermalPerformance HighLinearity for: TETRA, SSB, LTE Cost--effectiveOver--moldedPlastic Packaging InTapeandReel. R1Suffix = 500Units, 24mm TapeWidth, 13inchReel. TypicalApplications Output StageVHF BandMobileRadio Output StageUHF BandMobileRadio AFT05MS031NR1AFT05MS031GNR1 FreescaleSemiconductor, Inc., 2012--2013. All rights reserved. RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+40 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS Operating Voltage V 17,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J TotalDeviceDissipation T =25 C P 294 W C D Derateabove25 C 1.47 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.67 C/W JC CaseTemperature79C,31W CW,13.6Vdc,I =10mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) A,passes 100V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =40Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =13.6Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =115 Adc) DS D Drain--SourceOn--Voltage V 0.13 Vdc DS(on) (V =10Vdc,I =1.2Adc) GS D ForwardTransconductance g 5.8 S fs (V =10Vdc,I =7.5Adc) DS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat