X-On Electronics has gained recognition as a prominent supplier of AFT05MS031NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT05MS031NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT05MS031NR1 NXP

AFT05MS031NR1 electronic component of NXP
AFT05MS031NR1 NXP
AFT05MS031NR1 RF MOSFET Transistors
AFT05MS031NR1  Semiconductors

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See Product Specifications
Part No. AFT05MS031NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors MV9 UHF 13.6V
Datasheet: AFT05MS031NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 8.5836 ea
Line Total: USD 4291.8 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Mon. 05 May to Fri. 09 May
MOQ : 500
Multiples : 500
500 : USD 9.99

0
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 14.712
10 : USD 11.275
25 : USD 10.648
100 : USD 9.867
250 : USD 9.394
500 : USD 9.372
1000 : USD 9.163
2500 : USD 9.119
5000 : USD 9.097

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the AFT05MS031NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT05MS031NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFT05MS031N FreescaleSemiconductor Rev. 1, 4/2013 TechnicalData RFPowerLDMOSTransistors HighRuggedness N--Channel AFT05MS031NR1 Enhancement--ModeLateral MOSFETs AFT05MS031GNR1 Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications inmobileradioequipment. 136--520MHz,31W,13.6V WIDEBAND TypicalPerformance: (13.6Vdc,T =25 C,CW) A RFPOWERLDMOSTRANSISTORS Frequency G P1dB ps D (MHz) (dB) (%) (W) (1,4) 136--174 23.2 62.0 31 (2,4) 380--450 18.3 64.1 31 (3,4) 450--520 17.7 62.0 31 TO--270--2 (5) 520 17.7 71.4 33 PLASTIC AFT05MS031NR1 LoadMismatch/Ruggedness Signal Frequency P Test in Type VSWR (MHz) (W) Voltage Result (1) 155 CW >65:1 at all 0.55 17 NoDevice PhaseAngles (3dB Overdrive) Degradation TO--270--2 GULL (2) 420 1.6 PLASTIC (3dB Overdrive) AFT05MS031GNR1 (3) 490 2.0 (3dB Overdrive) (5) 520 1.1 (3dB Overdrive) 1. Measured in 136--174 MHz VHFbroadband reference circuit. 2. Measured in 380--450 MHz UHFbroadband reference circuit. 3. Measured in 450--520 MHz UHFbroadband reference circuit. Gate Drain 4. The values shown are the minimum measured performance numbers across the indicatedfrequency range. 5. Measuredin520MHz narrowbandtest circuit. Features Characterizedfor Operationfrom 136to520MHz (Top View) UnmatchedInput andOutput AllowingWideFrequency RangeUtilization Note: The backside of the package is the IntegratedESD Protection sourceterminalforthetransistor. IntegratedStability Enhancements Figure1.PinConnections Wideband Full Power Across theBand: 136--174MHz 380--450MHz 450--520MHz 225C Capable Plastic Package ExceptionalThermalPerformance HighLinearity for: TETRA, SSB, LTE Cost--effectiveOver--moldedPlastic Packaging InTapeandReel. R1Suffix = 500Units, 24mm TapeWidth, 13inchReel. TypicalApplications Output StageVHF BandMobileRadio Output StageUHF BandMobileRadio AFT05MS031NR1AFT05MS031GNR1 FreescaleSemiconductor, Inc., 2012--2013. All rights reserved. RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+40 Vdc DSS Gate--SourceVoltage V --6.0,+12 Vdc GS Operating Voltage V 17,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J TotalDeviceDissipation T =25 C P 294 W C D Derateabove25 C 1.47 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.67 C/W JC CaseTemperature79C,31W CW,13.6Vdc,I =10mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2500V MachineModel(perEIA/JESD22--A115) A,passes 100V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =40Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =13.6Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =115 Adc) DS D Drain--SourceOn--Voltage V 0.13 Vdc DS(on) (V =10Vdc,I =1.2Adc) GS D ForwardTransconductance g 5.8 S fs (V =10Vdc,I =7.5Adc) DS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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