DocumentNumber:AFT09MS031N FreescaleSemiconductor Rev. 1, 8/2012 Technical Data RFPowerLDMOSTransistors High Ruggedness N--Channel AFT09MS031NR1 Enhancement--Mode Lateral MOSFETs AFT09MS031GNR1 Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. 764--941MHz,31W,13.6V WIDEBAND NarrowbandPerformance (13.6 Vdc, I =500 mA, T =25C, CW) DQ A RFPOWERLDMOSTRANSISTORS Frequency G P1dB ps D (MHz) (dB) (%) (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 TO--270--2 800MHzBroadbandPerformance (13.6 Vdc, I =100 mA, T =25C, CW) DQ A PLASTIC AFT09MS031NR1 Frequency G P1dB ps D (MHz) (dB) (%) (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 TO--270--2 GULL PLASTIC LoadMismatch/Ruggedness AFT09MS031GNR1 Frequency Signal P Test in (MHz) Type VSWR (W) Voltage Result (1) 870 CW >65:1 at all 1.2 17 No Device Phase Angles (3 dB Overdrive) Degradation (2) 870 2.0 (3 dB Overdrive) Gate Drain 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz broadband reference circuit. Features Characterized for Operation from 764 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization (Top View) Integrated ESD Protection Note: The backside of the package is the Integrated Stability Enhancements source terminalforthe transistor. Wideband Full Power Across the Band (764870 MHz) 225C Capable Plastic Package Figure1.PinConnections Exceptional Thermal Performance High Linearity for: TETRA, SSB, LTE Cost--effective Over--molded Plastic Packaging In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel. TypicalApplications Output Stage 800 MHz Trunking Band Mobile Radio Output Stage 900 MHz Trunking Band Mobile Radio Freescale Semiconductor, Inc., 2012. All rights reserved. AFT09MS031NR1AFT09MS031GNR1 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +40 Vdc DSS Gate--Source Voltage V --6.0, +12 Vdc GS Operating Voltage V 17, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J TotalDevice Dissipation T =25C P 317 W C D Derate above 25C 1.59 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.63 C/W JC Case Temperature 81C, 31 W CW, 13.6 Vdc, I =500 mA, 870 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500 V Machine Model(perEIA/JESD22--A115) A, passes 100 V Charge Device Model(perJESD22--C101) IV, passes 1200 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =40Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =13.6 Vdc, V =0Vdc) DS GS Gate--Source Leakage Current I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =115 Adc) DS D Drain--Source On--Voltage V 0.1 Vdc DS(on) (V =10Vdc,I =1.2Adc) GS D Forward Transconductance g 7.8 S fs (V =10Vdc,I =10Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTF calculatoravailable at