DocumentNumber:AFT18HW355S
FreescaleSemiconductor
Rev. 1, 1/2013
TechnicalData
RFPowerLDMOSTransistor
N--Channel Enhancement--ModeLateral MOSFET
AFT18HW355SR6
This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidthcapability coveringthefrequency rangeof 1805to1880MHz.
TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts,
DD
I = 1100mA, V =1.45Vdc,P = 63Watts Avg., Input Signal
DQA GSB out
1805--1880MHz,63WAVG.,28V
PAR = 9.9dB @0.01%Probability onCCDF.
G OutputPAR ACPR IRL
ps D
Frequency (dB) (%) (dB) (dBc) (dB)
1805MHz 14.8 48.1 7.3 --27.2 --13
1840MHz 15.3 48.9 7.4 --27.7 --12
1880MHz 15.2 48.3 7.5 --29.2 --9
Features
AdvancedHighPerformanceIn--PackageDoherty
NI--1230S--4
Designedfor WideInstantaneous BandwidthApplications
Greater NegativeGate--SourceVoltageRangefor ImprovedClass C
Operation
Designedfor DigitalPredistortionError CorrectionSystems
InTapeandReel. R6Suffix = 150Units, 56mm TapeWidth, 13--inchReel.
Carrier
For R5TapeandReeloption, seep. 15.
RF /V31 RF /V
inA GSA outA DSA
(1)
RF /V RF /V
42
inB GSB outB DSB
Peaking
(TopView)
Figure1.PinConnections
1. Pinconnections 1and2areDCcoupled
andRFindependent.
FreescaleSemiconductor, Inc., 2013. All rights reserved.
AFT18HW355SR6
RF DeviceData
FreescaleSemiconductor, Inc.
1Table1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+65 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
OperatingVoltage V 32,+0 Vdc
DD
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperatureRange T --40to+125 C
C
(1,2)
OperatingJunctionTemperatureRange T --40to+225 C
J
CW Operation@T =25 C CW 259 W
C
Derateabove25 C 0.64
W/ C
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase R
C/W
JC
CaseTemperature77C,63W CW,28Vdc,I =1100mA,V =1.45Vdc,1840MHz 0.47
DQA GSB
(4)
CaseTemperature106C,225W CW ,28Vdc,I =1100mA,V =1.45Vdc,1840MHz 0.30
DQA GSB
Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2
MachineModel(perEIA/JESD22--A115) B
ChargeDeviceModel(perJESD22--C101) IV
Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
(5)
OffCharacteristics
ZeroGateVoltageDrainLeakageCurrent I 10 Adc
DSS
(V =65Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 5 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--SourceLeakageCurrent I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
(5)
OnCharacteristics -- SideA (Carrier)
GateThresholdVoltage V 1.6 2.1 2.6 Vdc
GS(th)
(V =10Vdc,I =146 Adc)
DS D
GateQuiescentVoltage V 2.4 2.9 3.4 Vdc
GS(Q)
(V =28Vdc,I =1100mAdc,MeasuredinFunctionalTest)
DD DA
Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10Vdc,I =1.5Adc)
GS D
(5)
OnCharacteristics -- SideB (Peaking)
GateThresholdVoltage V 1.6 2.1 2.6 Vdc
GS(th)
(V =10Vdc,I =291 Adc)
DS D
Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc
DS(on)
(V =10Vdc,I =2.9Adc)
GS D
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. MTTF calculator available at