X-On Electronics has gained recognition as a prominent supplier of AFT18HW355SR6 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT18HW355SR6 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT18HW355SR6 NXP

AFT18HW355SR6 electronic component of NXP
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Part No.AFT18HW355SR6
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
Datasheet: AFT18HW355SR6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
150: USD 247.8132 ea
Line Total: USD 37171.98 
Availability - 0
MOQ: 150  Multiples: 150
Pack Size: 150
   
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We are delighted to provide the AFT18HW355SR6 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT18HW355SR6 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFT18HW355S FreescaleSemiconductor Rev. 1, 1/2013 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET AFT18HW355SR6 This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidthcapability coveringthefrequency rangeof 1805to1880MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts, DD I = 1100mA, V =1.45Vdc,P = 63Watts Avg., Input Signal DQA GSB out 1805--1880MHz,63WAVG.,28V PAR = 9.9dB @0.01%Probability onCCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 14.8 48.1 7.3 --27.2 --13 1840MHz 15.3 48.9 7.4 --27.7 --12 1880MHz 15.2 48.3 7.5 --29.2 --9 Features AdvancedHighPerformanceIn--PackageDoherty NI--1230S--4 Designedfor WideInstantaneous BandwidthApplications Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R6Suffix = 150Units, 56mm TapeWidth, 13--inchReel. Carrier For R5TapeandReeloption, seep. 15. RF /V31 RF /V inA GSA outA DSA (1) RF /V RF /V 42 inB GSB outB DSB Peaking (TopView) Figure1.PinConnections 1. Pinconnections 1and2areDCcoupled andRFindependent. FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT18HW355SR6 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+125 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J CW Operation@T =25 C CW 259 W C Derateabove25 C 0.64 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,63W CW,28Vdc,I =1100mA,V =1.45Vdc,1840MHz 0.47 DQA GSB (4) CaseTemperature106C,225W CW ,28Vdc,I =1100mA,V =1.45Vdc,1840MHz 0.30 DQA GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (5) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (5) OnCharacteristics -- SideA (Carrier) GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =146 Adc) DS D GateQuiescentVoltage V 2.4 2.9 3.4 Vdc GS(Q) (V =28Vdc,I =1100mAdc,MeasuredinFunctionalTest) DD DA Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =1.5Adc) GS D (5) OnCharacteristics -- SideB (Peaking) GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =291 Adc) DS D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =2.9Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTF calculator available at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Freescale Semiconductor - NXP
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