DocumentNumber:AFT18S230S FreescaleSemiconductor Rev. 2, 3/2013 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET AFT18S230SR3 This 50 watt RF power LDMOS transistor is designed for cellular basestation applications coveringthefrequency rangeof1805to1880MHz. TypicalSingle--Carrier W--CDMA Performance: V =28Volts, DD I = 1800mA, P = 50Watts Avg., Input SignalPAR = 9.9dB 0.01% DQ out Probability onCCDF. 1805--1880MHz,50WAVG.,28V G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 18.9 32.0 7.2 --35.0 --19 1840MHz 19.1 32.0 7.1 --35.0 --18 1880MHz 19.0 32.0 6.8 --34.0 --11 Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation NI--780S--6 Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications InTapeandReel. R3Suffix = 250Units, 44mm TapeWidth, 13--inchReel. For R5TapeandReel option, seep. 12. N.C.16 VBW 25 RF /V RF /V in GS out DS VBW N.C.34 (TopView) Figure1.PinConnections FreescaleSemiconductor, Inc., 2012--2013. All rights reserved. AFT18S230SR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J CW Operation T =25 CwhenDCcurrentis fedthroughdrainlead,pin5 CW 253 W C Derateabove25 C 1.7 W/ C CW Operation T =25 CwhenDCcurrentis fedthroughpin4andpin6 CW 83 W C Derateabove25 C 0.41 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,50W CW,28Vdc,I =1800mA,1840MHz 0.41 DQ (4) CaseTemperature92C,160W CW ,28Vdc,I =1800mA,1840MHz 0.31 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS =65Vdc,V =0Vdc) (V DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =291 Adc) DS D GateQuiescentVoltage V 2.3 2.8 3.3 Vdc GS(Q) (V =28Vdc,I =1800mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.24 0.3 Vdc DS(on) (V =10Vdc,I =2.9Adc) GS D (5) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =1800mA,P =50W Avg.,f=1880MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.0 19.0 21.0 dB ps DrainEfficiency 30.5 32.0 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 6.4 6.8 dB AdjacentChannelPowerRatio ACPR --34.0 --32.0 dBc InputReturnLoss IRL --11 --7 dB 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat