DocumentNumber:AFT20S015N NXPSemiconductors Rev. 2, 04/2020 Technical Data RFPowerLDMOSTransistors AFT20S015N N--Channel Enhancement--Mode Lateral MOSFETs AFT20S015GN These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100MHz Typical Single--Carrier W--CDMA Performance: V =28Vdc, 18052700MHz,1.5WAVG.,28V DD I = 132 mA, P = 1.5 W Avg., Input Signal PAR = 9.9 dB 0.01% AIRFASTRFPOWERLDMOS DQ out Probability on CCDF. TRANSISTORS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 17.5 22.0 8.9 --43.0 --11 2140 MHz 17.6 22.0 9.0 --44.0 --12 2170 MHz 17.6 22.0 9.1 --44.0 --14 TO--270--2 PLASTIC 1800MHz AFT20S015N Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 132 mA, P = 1.5 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out Probability on CCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) TO--270--2 GULL 1805 MHz 18.0 21.0 9.2 --42.0 --11 PLASTIC AFT20S015GN 1840 MHz 18.1 22.0 9.2 --44.0 --10 1880 MHz 18.0 22.0 9.1 --45.0 --10 2600MHz Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 132 mA, P = 2.1 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out Probability on CCDF. RF /V RF /V in GS out DS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2300 MHz 15.7 23.0 9.0 --45.0 --6 2400 MHz 16.0 23.0 8.8 --44.0 --7 2500 MHz 15.8 23.0 8.6 --43.0 --6 (Top View) 2600 MHz 15.8 21.0 8.5 --43.0 --7 Note: The backside of the package is the source terminalforthe transistor. 2700 MHz 15.5 20.0 8.4 --42.0 --8 Figure1.PinConnections Features Greater negative gate--source voltage range for improved Class C operation Designed for digital predistortion error correctionsystems Optimized for Doherty applications 2013, 2020 NXP B.V. AFT20S015NAFT20S015GN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J CW Operation T =25 C CW 11 W C Derate above 25 C 0.1 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 4.2 C/W JC Case Temperature 77C, 1.5 W CW, 28 Vdc, I =132 mA, 2140 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1C Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =17.6 Adc) DS D Gate Quiescent Voltage V 2.4 3.0 3.4 Vdc GS(Q) (V =28Vdc,I =132 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =176 Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at