DocumentNumber:AFT21S140W02S FreescaleSemiconductor Rev. 0, 2/2014 Technical Data RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs AFT21S140W02SR3 These32WRFpowerLDMOStransistorsaredesignedforcellularbase AFT21S140W02GSR3 station applications requiringvery wideinstantaneous bandwidthcapability coveringthefrequency rangeof2110to2170MHz. Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 800 mA, P = 32 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out 21102170MHz,32WAVG.,28V Probability onCCDF. AIRFASTRFPOWERLDMOS G OutputPAR ACPR IRL ps D TRANSISTORS Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 19.0 33.9 6.7 --32.4 --15 2140 MHz 19.3 33.5 6.7 --32.6 --24 2170 MHz 19.4 33.2 6.7 --32.7 --22 NI--780S--2L Features AFT21S140W02SR3 Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. NI--780GS--2L AFT21S140W02GSR3 RF /V21 RF /V in GS out DS (Top View) Figure1.PinConnections AFT21S140W02SR3AFT21S140W02GSR3 FreescaleSemiconductor, Inc., 2014. All rights reserved. RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +125 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J CW Operation T =25 C CW 124 W C Derate above 25 C 0.70 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.59 C/W JC Case Temperature 80C, 32 W CW, 28 Vdc, I =800 mA, 2140 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =146 Adc) DS D Gate Quiescent Voltage V 1.5 1.9 2.3 Vdc GS(Q) (V =28Vdc,I =800 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.4Adc) GS D (4,5) FunctionalTests (In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =800 mA, P =32 W Avg., f =2140 MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =9.9 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.7 19.3 21.7 dB ps Drain Efficiency 32.0 33.5 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 6.2 6.7 dB Adjacent ChannelPowerRatio ACPR --32.6 --30.5 dBc Input Return Loss IRL --24 --9 dB 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at