DocumentNumber:AFT21S220W02S FreescaleSemiconductor Rev. 0, 2/2014 Technical Data RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs AFT21S220W02SR3 These50WRFpowerLDMOStransistorsaredesignedforcellularbase AFT21S220W02GSR3 station applications requiringvery wideinstantaneous bandwidthcapability coveringthefrequency rangeof2110to2170MHz. Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 1200 mA, P = 50 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out 21102170MHz,50WAVG.,28V Probability onCCDF. AIRFASTRFPOWERLDMOS G OutputPAR ACPR IRL ps D TRANSISTORS Frequency (dB) (%) (dB) (dBc) (dB) 2110 MHz 18.9 29.8 7.2 34.0 18 2140 MHz 19.1 29.3 7.1 34.0 25 2170 MHz 19.2 28.9 7.0 34.0 17 NI--780S--2L AFT21S220W02SR3 Features Designed for Wide Instantaneous Bandwidth Applications Greater Negative Gate--Source Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating NI--780GS--2L Conditions AFT21S220W02GSR3 Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. RF /V RF /V 21 in GS out DS (Top View) Figure1.PinConnections FreescaleSemiconductor, Inc., 2014. All rights reserved. AFT21S220W02SR3AFT21S220W02GSR3 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +65 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +125 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T =25 C CW 92 W C Derate above 25 C 0.41 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.56 C/W JC Case Temperature 91C, 50 W CW, 28 Vdc, I =1200 mA, 2140 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) B Charge Device Model(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =300 Adc) DS D Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc GS(Q) (V =28Vdc,I =1200 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =3.0Adc) GS D (4,5) FunctionalTests (In Freescale Test Fixture, 50 ohm system)V =28Vdc,I =1200 mA, P =50 W Avg., f =2140 MHz, DD DQ out Single--CarrierW--CDMA, IQ MagnitudeClipping, Input SignalPAR =9.9 dB 0.01%Probability on CCDF. ACPR measured in 3.84 MHz ChannelBandwidth 5MHzOffset. PowerGain G 18.1 19.1 21.1 dB ps Drain Efficiency 26.0 29.3 % D Output Peak--to--Average Ratio 0.01%Probability on CCDF PAR 6.6 7.1 dB Adjacent ChannelPowerRatio ACPR 34.0 32.0 dBc Input Return Loss IRL 25 12 dB 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at