Document Number: AFT26H200W03S
Freescale Semiconductor
Rev. 0, 8/2013
Technical Data
RF Power LDMOS Transistor
NChannel EnhancementMode Lateral MOSFET
AFT26H200W03SR6
This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2496 to 2690 MHz.
Typical Doherty SingleCarrier WCDMA Performance: V = 28 Volts,
DD
I = 500 mA, V = 0.3 Vdc, P = 45 Watts Avg., Input Signal
DQA GSB out
PAR = 9.9 dB @ 0.01% Probability on CCDF.
24962690 MHz, 45 W AVG., 28 V
AIRFAST RF POWER LDMOS
G Output PAR ACPR
ps D
Frequency (dB) (%) (dB) (dBc) TRANSISTOR
2496 MHz 14.1 45.2 7.8 31.1
2590 MHz 14.2 44.0 7.8 35.6
2690 MHz 13.9 44.1 7.6 37.5
Features
Advanced High Performance InPackage Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative GateSource Voltage Range for Improved Class C
Operation
NI1230S4S
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13inch Reel.
Carrier
RF /V
31 RF /V
inA GSA
outA DSA
(1)
RF /V42 RF /V
inB GSB outB DSB
Peaking
(Top View)
Figure 1. Pin Connections
1. Pin connections 1 and 2 are DC coupled
and RF independent.
Freescale Semiconductor, Inc., 2013. All rights reserved.
AFT26H200W03SR6
RF Device Data
Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings
Rating Symbol Value Unit
DrainSource Voltage V 0.5, +65 Vdc
DSS
GateSource Voltage V 6.0, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T 65 to +150 C
stg
Case Operating Temperature Range T 40 to +125 C
C
(1,2)
Operating Junction Temperature Range T 40 to +225 C
J
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R 0.46 C/W
JC
Case Temperature 76C, 45 WCDMA, 28 Vdc, I = 500 mA, V = 0.3 Vdc, 2590 MHz
DQA GSB
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22A114) 2
Machine Model (per EIA/JESD22A115) B
Charge Device Model (per JESD22C101) III
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(4)
Off Characteristics
(5)
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS GS
(5)
Zero Gate Voltage Drain Leakage Current I 5 Adc
DSS
(V = 28 Vdc, V = 0 Vdc)
DS GS
(6)
GateSource Leakage Current I 1 Adc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS DS
(4,6)
On Characteristics Side A (Carrier)
Gate Threshold Voltage V 0.8 1.2 1.6 Vdc
GS(th)
(V = 10 Vdc, I = 100 Adc)
DS D
Gate Quiescent Voltage V 1.4 1.8 2.2 Vdc
GS(Q)
(V = 28 Vdc, I = 500 mAdc, Measured in Functional Test)
DD DA
DrainSource OnVoltage V 0.1 0.15 0.3 Vdc
DS(on)
(V = 6 Vdc, I = 1.0 Adc)
GS D
(4,6)
On Characteristics Side B (Peaking)
Gate Threshold Voltage V 0.8 1.2 1.6 Vdc
GS(th)
(V = 10 Vdc, I = 180 Adc)
DS D
DrainSource OnVoltage V 0.1 0.15 0.3 Vdc
DS(on)
(V = 6 Vdc, I = 1.8 Adc)
GS D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at