DocumentNumber:AFT26H250W03S 24S FreescaleSemiconductor Rev. 0, 11/2013 TechnicalData RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs AFT26H250W03SR6 These50WasymmetricalDohertyRFpowerLDMOStransistorsaredesigned AFT26H250--24SR6 forcellularbasestationapplicationsrequiringverywideinstantaneousbandwidth capability coveringthefrequency rangeof2496to2690MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 700mA, V =0.4Vdc,P = 50W Avg., Input Signal DQA GSB out PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR 24962690MHz,50WAVG.,28V ps D Frequency (dB) (%) (dB) (dBc) AIRFASTRFPOWERLDMOS TRANSISTORS 2496MHz 14.1 44.6 8.1 --31.5 2590MHz 14.4 44.9 8.1 --33.8 2690MHz 14.2 44.2 7.9 --37.6 Features AdvancedHighPerformanceIn--PackageDoherty Designedfor WideInstantaneous BandwidthApplications (AFT26H250W03S) Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems InTapeandReel. R6Suffix = 150Units, 56mm TapeWidth, 13--inchReel. Carrier RF /V31 RF /V inA GSA outA DSA (1) RF /V42 RF /V inB GSB outB DSB Peaking (TopView) NI--1230S--4S Figure1.PinConnections AFT26H250W03SR6 1. Pinconnections 1and2areDCcoupledandRFindependent. (2) 6 VBW A Carrier RF /V15 RF /V inA GSA outA DSA RF /V24 RF /V inB GSB outB DSB Peaking (2) 3 VBW B (TopView) NI--1230S--4L2L AFT26H250--24SR6 Figure2.PinConnections 2. DevicecannotoperatewiththeV currentsuppliedthroughpin3andpin6. DD FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT26H250W03SR6AFT26H250--24SR6 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange AFT26H250W03S T --40to+125 C C AFT26H250--24S --40to+150 (1,2) OperatingJunctionTemperatureRange T --40to+225 C J CW Operation T =25 C CW 294 W C Derateabove25 C 1.7 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.42 C/W JC CaseTemperature78C,50W--CDMA,28Vdc,I =700mA,V =0.4Vdc,2590MHz DQA GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics (4,5) ZeroGateVoltageDrainLeakageCurrent AFT26H250W03S I 10 Adc DSS (6) (V =65Vdc,V =0Vdc) AFT26H250--24S DS GS (4,5) ZeroGateVoltageDrainLeakageCurrent AFT26H250W03S I 5 Adc DSS (6) (V =28Vdc,V =0Vdc) AFT26H250--24S 1 DS GS (4,5) Gate--SourceLeakageCurrent AFT26H250W03S I 1 Adc GSS (6) (V =5Vdc,V =0Vdc) AFT26H250--24S GS DS OnCharacteristics -- SideA(Carrier) (4,6) GateThresholdVoltage AFT26H250W03S V 0.8 1.2 1.6 Vdc GS(th) (6) (V =10Vdc,I =140 Adc) AFT26H250--24S DS D (4,6) GateQuiescentVoltage AFT26H250W03S V 1.4 1.8 2.2 Vdc GS(Q) (6) (V =28Vdc,I =700mAdc, AFT26H250--24S DD DA MeasuredinFunctionalTest) (4,6) Drain--SourceOn--Voltage AFT26H250W03S V 0.1 0.15 0.3 Vdc DS(on) (6) (V =6Vdc,I =1.4Adc) AFT26H250--24S GS D OnCharacteristics -- SideB(Peaking) (4,6) GateThresholdVoltage AFT26H250W03S V 0.8 1.2 1.6 Vdc GS(th) (6) (V =10Vdc,I =200 Adc) AFT26H250--24S DS D (4,6) Drain--SourceOn--Voltage AFT26H250W03S V 0.1 0.15 0.3 Vdc DS(on) (6) (V =6Vdc,I =2.0Adc) AFT26H250--24S GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTF calculator available at