DocumentNumber:AFV121KH FreescaleSemiconductor Rev. 0, 11/2015 Technical Data RFPowerLDMOSTransistors AFV121KH HighRuggedness N--Channel AFV121KHS Enhancement--ModeLateral MOSFETs AFV121KGS These RF power transistors are designed for pulse applications operating at frequencies from960to1215MHz,suchas distancemeasuringequipment (DME),secondaryradarsandhighpowertranspondersforairtrafficcontrol. 9601215MHz,1000WPEAK,50V Thesedevicesaresuitableforuseinpulseapplications withlargedutycycles AIRFASTRFPOWERLDMOS andlongpulses,includingModeSELM. TRANSISTORS TypicalShortPulsePerformance: In 9601215 MHz reference circuit, V =50Vdc, DD I =100mA, P =25W DQ in Frequency P G out ps D (MHz) SignalType (W) (dB) (%) NI--1230H--4S 960 Pulse 1390 Peak 17.5 51.1 AFV121KH (128 sec,10%Duty Cycle) 1030 1410 Peak 17.5 51.8 1090 1370 Peak 17.4 52.2 1215 1230 Peak 16.9 55.8 NI--1230S--4S TypicalLongPulsePerformance: In 9601215 MHz reference circuit, V =50Vdc, DD AFV121KHS I =100mA, P =25W DQ in Frequency P G out ps D (MHz) SignalType (W) (dB) (%) 960 Pulse 1160 Peak 16.6 50.8 (2 msec, 10%Duty Cycle) NI--1230GS--4L 1030 1190 Peak 16.8 52.1 AFV121KGS 1090 1210 Peak 16.8 49.2 1215 1060 Peak 16.2 50.6 LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result GateA31 DrainA (1) 1030 Pulse >20:1 at all 25 Peak 50 NoDevice (128 sec,10% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) DrainB GateB42 1. Measured in 960--1215 MHz reference circuit. Features (Top View) Internally Input and Output Matched for Broadband Operation and Ease of Use Note: The backside of the package is the Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature source terminalforthe transistors. Configuration Qualified up to a Maximum of 50 V Operation Figure1.PinConnections DD High Ruggedness, Handles > 20:1 VSWR IntegratedESD ProtectionwithGreater Negative Voltage Range for Improved Class C OperationandGateVoltagePulsing CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters TypicalApplications Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars such as Mode S ELM Interrogators Distance Measuring Equipment (DME) Mode S Transponders, Including: Traffic Alert andCollisionAvoidanceSystems (TCAS) Automatic Dependent Surveillance--Broadcast In and Out (ADS--B) Using, e.g., 1090 ExtendedSquitter or Universal Access Transponder (UAT) FreescaleSemiconductor, Inc., 2015. All rights reserved. AFV121KHAFV121KHSAFV121KGS RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +112 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to 150 C C (1,2) Operating Junction Temperature Range T 40 to 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalImpedance, Junction to Case Z C/W JC Pulse: Case Temperature 64C, 1000 W Peak, 128 sec Pulse Width, (4) 10%Duty Cycle, 50 Vdc, I =100 mA, 1030 MHz 0.017 DQ Pulse: Case Temperature 65C, 1000 W Peak, 2 msec Pulse Width, (4) 10%Duty Cycle, 50 Vdc, I =100 mA, 1030 MHz 0.050 DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (5) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 112 Vdc (BR)DSS (V =0Vdc,I =10 A) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =112Vdc,V =0Vdc) DS GS OnCharacteristics (5) Gate Threshold Voltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =520 Adc) DS D (6) Gate Quiescent Voltage V 1.5 2.0 2.5 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (5) Drain--Source On--Voltage V 0.05 0.17 0.35 Vdc DS(on) (V =10Vdc,I =2.6Adc) GS D (5) DynamicCharacteristics Reverse TransferCapacitance C 2.5 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at