PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 15 W with 16 dB gain 870 MHz / OUT 13.6 V Plastic package PowerSO-10RF (formed lead) ESD protection In compliance with the 2002/95/EC European directive Description The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability Figure 1. Pin connection thanks to ST s latest LDMOS technology mounted on the first true SMD plastic RF power package, Source the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high Drain Gate power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly. Table 1. Device summary Order codes Package Packaging PD85015-E PowerSO-10RF (formed lead) Tube PD85015S-E PowerSO-10RF (straight lead) Tube PD85015TR-E PowerSO-10RF (formed lead) Tape and reel PD85015STR-E PowerSO-10RF (straight lead) Tape and reel May 2012 Doc ID 14466 Rev 4 1/14 This is information on a product in full production. www.st.com 14Contents PD85015-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 3 Impedance . 5 4 Typical performances 6 5 Package mechanical data . 7 6 Revision history . 13 2/14 Doc ID 14466 Rev 4