2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: Y = 100 mS (min) fs I = 50 mA D Low on resistance: R = 1.3 (typ.) I = 50 mA DS (ON) D Enhancement-mode Complementary to 2SK1062 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS JEDEC DC I 200 D Drain current mA Pulse I 800 DP JEITA SC-59 Drain power dissipation (Ta = 25C) P 200 mW D TOSHIBA 2-3F1F Channel temperature T 150 C ch Weight: 0.012 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is the electrostatic sensitive device. Please handle with caution. Marking Start of commercial production 1988-06 1 2014-03-01 2SJ168 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 100 nA GSS GS DS Drain cut-off current I V = 60 V, V = 0 10 A DSS DS GS Drain-source breakdown voltage V I = 1 mA, V = 0 60 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2 3.5 V th DS D Forward transfer admittance Y V = 10 V, I = 50 mA 100 mS fs DS D Drain-source ON resistance R I = 50 mA, V = 10 V 1.3 2.0 DS (ON) D GS Drain-source ON voltage V I = 50 mA, V = 10 V 65 100 mV DS (ON) D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 73 85 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 15 22 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 48 60 pF oss DS GS Rise time t 8 r Turn-on time t 14 on Switching time ns Fall time t 35 f V : t , t < 5 ns IN r f Turn-off Time t 100 off D.U. 1% (Z = 50 ) out 2 2014-03-01