X-On Electronics has gained recognition as a prominent supplier of 2SJ168TE85LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SJ168TE85LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SJ168TE85LF Toshiba

2SJ168TE85LF electronic component of Toshiba
2SJ168TE85LF Toshiba
2SJ168TE85LF MOSFETs
2SJ168TE85LF  Semiconductors

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See Product Specifications
Part No. 2SJ168TE85LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistors RF MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V
Datasheet: 2SJ168TE85LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9252 ea
Line Total: USD 1.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.4226
6000 : USD 0.3777
15000 : USD 0.3637
30000 : USD 0.3544

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 1.0419
10 : USD 0.8878
100 : USD 0.6809
500 : USD 0.5383
1000 : USD 0.4306

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 1.0419
10 : USD 0.8878
100 : USD 0.6809
500 : USD 0.5383
1000 : USD 0.4306

0
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 1.9252
10 : USD 0.9335
100 : USD 0.5266
500 : USD 0.4287
1000 : USD 0.3531
3000 : USD 0.322
6000 : USD 0.2978
9000 : USD 0.288

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 162
Multiples : 1
162 : USD 0.6163
250 : USD 0.5916
500 : USD 0.5702
1000 : USD 0.5516

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
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Technology
Configuration
Transistor Type
Type
Brand
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SJ168TE85LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SJ168TE85LF and other electronic components in the MOSFETs category and beyond.

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2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: Y = 100 mS (min) fs I = 50 mA D Low on resistance: R = 1.3 (typ.) I = 50 mA DS (ON) D Enhancement-mode Complementary to 2SK1062 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS JEDEC DC I 200 D Drain current mA Pulse I 800 DP JEITA SC-59 Drain power dissipation (Ta = 25C) P 200 mW D TOSHIBA 2-3F1F Channel temperature T 150 C ch Weight: 0.012 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is the electrostatic sensitive device. Please handle with caution. Marking Start of commercial production 1988-06 1 2014-03-01 2SJ168 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 100 nA GSS GS DS Drain cut-off current I V = 60 V, V = 0 10 A DSS DS GS Drain-source breakdown voltage V I = 1 mA, V = 0 60 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2 3.5 V th DS D Forward transfer admittance Y V = 10 V, I = 50 mA 100 mS fs DS D Drain-source ON resistance R I = 50 mA, V = 10 V 1.3 2.0 DS (ON) D GS Drain-source ON voltage V I = 50 mA, V = 10 V 65 100 mV DS (ON) D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 73 85 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 15 22 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 48 60 pF oss DS GS Rise time t 8 r Turn-on time t 14 on Switching time ns Fall time t 35 f V : t , t < 5 ns IN r f Turn-off Time t 100 off D.U. 1% (Z = 50 ) out 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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