X-On Electronics has gained recognition as a prominent supplier of 2SJ668 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SJ668 MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SJ668 Toshiba

2SJ668 electronic component of Toshiba
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See Product Specifications
Part No.2SJ668
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK
Datasheet: 2SJ668 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.4637 ea
Line Total: USD 927.4 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 0.4637

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the 2SJ668 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SJ668 and other electronic components in the MOSFETs category and beyond.

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The 2SJ668 part of Toshiba is a P-channel Power MOSFET with low on-resistance and a maximum drain source voltage of -30V. It has a drain current of 0.2A (max) and a fast switching speed. The gate charge of this MOSFET is relatively low compared to other types, making it well suited for switching applications. It is ideal for use in high side switch circuits, small relays, and motor drives. This MOSFET is also RoHS compliant, providing a more environmentally friendly option for manufacturers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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