X-On Electronics has gained recognition as a prominent supplier of 2SK3799(Q,M) MOSFET across the USA, India, Europe, Australia, and various other global locations. 2SK3799(Q,M) MOSFET are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

2SK3799(Q,M) Toshiba

2SK3799(Q,M) electronic component of Toshiba
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See Product Specifications
Part No.2SK3799(Q,M)
Manufacturer: Toshiba
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; 50W; TO220FP
Datasheet: 2SK3799(Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.3129 ea
Line Total: USD 3.31

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 12 Jul to Thu. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 3.3129
3 : USD 2.9776
8 : USD 2.2801
21 : USD 2.1594

   
Manufacturer
Product Category
Features Of Semiconductor Devices
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the 2SK3799(Q,M) from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3799(Q,M) and other electronic components in the MOSFET category and beyond.

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1. The 2SK3799(Q,M) is a power MOSFET manufactured by Toshiba Semiconductor. It is an enhancement-mode type MOSFET with an N-channel structure. 2. It has a drain-to-source voltage (VDS) rating of 60V, and a drain current of 44A with a power dissipation (PD) rating of 100W. The 2SK3799(Q,M) MOSFET is qualified to meet higher drain-source breakdown voltages while offering an extremely low on-state resistance (RDS(on)). This allows the device to handle more power at higher load currents.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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