The 2N7002P.215 is a small signal N-channel enhancement mode MOSFET transistor, manufactured by Nexperia. It has an extremely low on-state resistance, making it useful for switching applications, as well as low-level amplifier and current sources. The device is single-packed in the SOT-23 package, and the on-state resistance is 1.25Ohms, for an drain-source voltage of 2.7V up to 5.5V. The channel length, gate charge and avalanche energy of the 2N7002P.215 are 5.3, 8.3 and 5.1 mJ, respectively. This device has an excellent thermal resistance, as it can dissipate up to 2W of power while maintaining a temperature range of -55 to +125 °C.