X-On Electronics has gained recognition as a prominent supplier of DMN67D8LW-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN67D8LW-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN67D8LW-13 Diodes Incorporated

DMN67D8LW-13 electronic component of Diodes Incorporated
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Part No.DMN67D8LW-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 60V 240mA 320mW 5O@10V,500mA N Channel SOT-323-3 MOSFETs ROHS
Low Voltage Adjustable Shunt Regulator with Low Dropout Voltage.
Datasheet: DMN67D8LW-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0602 ea
Line Total: USD 0.6 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
54183
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.154
10 : USD 0.1045
100 : USD 0.0539
1000 : USD 0.0429
2500 : USD 0.0374
10000 : USD 0.0286

   
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RoHS - XON
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We are delighted to provide the DMN67D8LW-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN67D8LW-13 and other electronic components in the MOSFETs category and beyond.

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DMN67D8LW-13 is an N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by Diodes Incorporated. It has an 11.2V drain-source breakdown voltage (BVDSS) rating, 21A continuous drain current (ID) rating, and on-resistance (RDS(on)) of 355mR at 10V. This MOSFET is ideally suited for power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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