DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance: R D DS(ON) BV R max DSS DS(ON) T = +25C C Low Gate Threshold Voltage 20V 550 m V = 4.5V 0.54 mA GS Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT-323 Automotive applications. It is qualified to AEC-Q101, supported by a Cas e Mat erial: Molded P las t ic, Green Molding Com pound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Engine Management Systems Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Body Control Electronics Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D SOT-323 D G G S ESD protected Gate TOP VIEW Gate Protection S Diode TOP VIEW Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMN2004WKQ-7 SOT-323 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2004WKQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS T = +25C Drain Current (Note 6) Steady 540 A mA I D State 390 T = +85C A Pulsed Drain Current (Note 7) I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) 200 mW PD Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 PCB. 7. Pulse width 10S, Duty Cycle 1%. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 1 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 540mA 0.4 0.55 GS D Static Drain-Source On-Resistance 0.5 0.70 R V = 2.5V, I = 500mA DS (ON) GS D 0.7 0.9 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y 200 ms V =10V, I = 0.2A fs DS D Diode Forward Voltage (Note 8) V 0.5 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS(Note 9) Input Capacitance 150 pF C iss V = 16V, V = 0V DS GS Output Capacitance 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance 20 pF Crss Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2004WKQ August 2016 Diodes Incorporated www.diodes.com Document number: DS39166 Rev. 1 - 2