X-On Electronics has gained recognition as a prominent supplier of 2N7002PS MOSFET across the USA, India, Europe, Australia, and various other global locations. 2N7002PS MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

2N7002PS NXP

2N7002PS electronic component of NXP
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See Product Specifications
Part No.2N7002PS
Manufacturer: NXP
Category: MOSFET
Description: MOSFET,NN CH,60V,0.32A,SOT363
Datasheet: 2N7002PS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.1502 ea
Line Total: USD 75.1

Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 12 Jul to Thu. 18 Jul
MOQ : 500
Multiples : 1
500 : USD 0.1134
1500 : USD 0.1074

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Drain Current Id N Channel
Current Id Max
Drain Source Voltage Vds N Channel
Module Configuration
On Resistance Rdson N Channel
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the 2N7002PS from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002PS and other electronic components in the MOSFET category and beyond.

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2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 320 mA D amb V =10V GS R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad 2 for drain 1 cm .2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 6 5 4 D D 1 2 2 G1 gate1 3D2 drain2 4S2 source2 132 5 G2 gate2 6D1 drain1 S G S G 1 1 2 2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002PS M8* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 320mA amb T =100 C- 240mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 1 July 2010 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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