Product Information

2N7002PS

2N7002PS electronic component of NXP

Datasheet
MOSFET,NN CH,60V,0.32A,SOT363
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.1313 ea
Line Total: USD 65.65

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 500
Multiples : 1
500 : USD 0.1313
1500 : USD 0.1239

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Drain Current Id N Channel
Current Id Max
Drain Source Voltage Vds N Channel
Module Configuration
On Resistance Rdson N Channel
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 320 mA D amb V =10V GS R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad 2 for drain 1 cm .2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 6 5 4 D D 1 2 2 G1 gate1 3D2 drain2 4S2 source2 132 5 G2 gate2 6D1 drain1 S G S G 1 1 2 2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002PS M8* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 320mA amb T =100 C- 240mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 1 July 2010 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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