X-On Electronics has gained recognition as a prominent supplier of 2N7002PS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002PS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002PS,115 Nexperia

2N7002PS,115 electronic component of Nexperia
2N7002PS,115 Nexperia
2N7002PS,115 MOSFETs
2N7002PS,115  Semiconductors

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See Product Specifications
Part No. 2N7002PS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 320mA 420mW Surface Mount 6-TSSOP
Datasheet: 2N7002PS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0818 ea
Line Total: USD 0.82 
Availability - 2716
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
66542
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 2304
Multiples : 1
2304 : USD 0.0636
9000 : USD 0.0623

5820
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0636
9000 : USD 0.0623

2716
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ : 10
Multiples : 10
10 : USD 0.0818
100 : USD 0.067
300 : USD 0.0595
3000 : USD 0.0519
6000 : USD 0.0474
9000 : USD 0.0451

147195
Ship by Thu. 23 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2046
10 : USD 0.1375
100 : USD 0.0715
1000 : USD 0.0605
3000 : USD 0.0495
9000 : USD 0.0484

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002PS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002PS,115 and other electronic components in the MOSFETs category and beyond.

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2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 320 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source1 D D 6 5 4 1 2 2 G1 gate1 3 D2 drain2 4 S2 source2 1 2 3 5 G2 gate2 TSSOP6 (SOT363) S G S G 1 1 2 2 6 D1 drain1 msd901 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS TSSOP6 plastic, surface-mounted package 6 leads 0.65 mm pitch 2.1 SOT363 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 M8% 2N7002PS 1 % = placeholder for manufacturing site code 2N7002PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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