2N7002PS,115 Nexperia

2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 320 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source1 D D 6 5 4 1 2 2 G1 gate1 3 D2 drain2 4 S2 source2 1 2 3 5 G2 gate2 TSSOP6 (SOT363) S G S G 1 1 2 2 6 D1 drain1 msd901 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS TSSOP6 plastic, surface-mounted package 6 leads 0.65 mm pitch 2.1 SOT363 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 M8% 2N7002PS 1 % = placeholder for manufacturing site code 2N7002PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15