Product Information

2N7002PV,115

2N7002PV,115 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET x2; Trench; 60V; 250mA; Idm: 1.2A; 500mW
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0554 ea
Line Total: USD 221.6

337560 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
337560 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 4000
Multiples : 4000

Stock Image

2N7002PV,115
Nexperia

4000 : USD 0.0554
24000 : USD 0.0542

65960 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 4000
Multiples : 4000

Stock Image

2N7002PV,115
Nexperia

4000 : USD 0.0559
8000 : USD 0.0547

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 350 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002PV 60 V, 350 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source1 6 5 4 2 G1 gate1 3 D2 drain2 4 S2 source2 1 2 3 5 G2 gate2 G1 S1 S2 G2 SOT666 6 D1 drain1 017aaa254 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PV SOT666 plastic, surface-mounted package 6 leads 0.5 mm pitch 1.6 SOT666 mm x 1.2 mm x 0.55 mm body 7. Marking Table 4. Marking codes Type number Marking code ZF 2N7002PV 2N7002PV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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