Enhancement Mode Field Effect Transistor NChannel 2N7002W Features www.onsemi.com Low OnResistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SC70/SOT323 UltraSmall Surface Mount Package CASE 419 These Devices are PbFree and are RoHS Compliant SIMPLIFIED SCHEMATIC ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS V 60 V DrainGate Voltage R 1.0 M GS DGR GateSource Voltage V V GSS Continuous 20 Pulsed 40 GateSource Voltage I mA D Continuous 115 Continuous 100C 73 MARKING DIAGRAM Pulsed 800 & PIN ASSIGNMENT Drain Junction and Storage Temperature Range T , T 55 to C J STG 3 +150 D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be &E&Y assumed, damage may occur and reliability may be affected. &Z2N&G S THERMAL CHARACTERISTICS G 1 2 Parameter Symbol Max Unit Gate Source Total Device Dissipation P 200 mW Line 1: D Derating above T = 25C 1.6 mW/C &E = Space A &Y = Binary Year Code Thermal Resistance, JunctiontoAmbient R 625 C/W JA (Note 1) Line 2: 1. Device mounted on FR4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land &Z = Designates the Assembly Plant Code pad size. 2N = Specific Device Code &G = 1digit Week Code ORDERING INFORMATION Device Package Shipping 2N7002W SC70 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: March, 2021 Rev. 2 2N7002WFCS/D2N7002W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS (Note 2) DrainSource Breakdown Voltage BV V = 0 V, I = 10 A 60 78 V DSS GS D Zero Gate Voltage Drain Current I T = 25C 0.001 1.0 A DSS C V = 0 V, GS V = 60 V T = 125C 7 500 DS C GateBody Leakage Current I V = 20 V, V = 0 V 0.2 10 nA GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.76 2.0 V GS(th) GS DS D Static DrainSource OnResistance R V = 5 V, I = 0.05 A 1.6 7.5 DS(ON) GS D V = 10 V, I = 0.5 A, T = 125C 2.53 13.5 GS D J OnState Drain Current I V = 10 V, V = 7.5 V 0.5 1.43 A D(ON) GS DS Forward Transconductance g V = 10 V, I = 0.2 A 80 356.5 mS FS DS D DYNAMIC CHARACTERISTICS Input Capacitance C 37.8 50 pF ISS Output Capacitance C V = 0 V, V = 25 V, f = 1.0 MHz 12.4 25 OSS GS DS Reverse Transfer Capacitance C 6.5 7.0 RSS SWITCHING CHARACTERISTICS TurnOn Delay Time t 5.85 20 ns D(ON) V = 10 V, V = 30 V, I = 0.2 A, GEN DD D R = 150 , R = 25 L GEN TurnOff Delay Time t 12.5 20 D(OFF) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Short duration test pulse used to minimize selfheating effect. www.onsemi.com 2