X-On Electronics has gained recognition as a prominent supplier of 3LP01M-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. 3LP01M-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

3LP01M-TL-H ON Semiconductor

3LP01M-TL-H electronic component of ON Semiconductor
3LP01M-TL-H ON Semiconductor
3LP01M-TL-H MOSFETs
3LP01M-TL-H  Semiconductors

Images are for reference only
See Product Specifications
Part No. 3LP01M-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SWITCHING DEVICE
Datasheet: 3LP01M-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.0031
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Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0903
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0
MOQ : 1
Multiples : 1
1 : USD 0.4946
10 : USD 0.3727
100 : USD 0.2108
500 : USD 0.1396
1000 : USD 0.107
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0
MOQ : 12000
Multiples : 3000
12000 : USD 0.0321
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MOQ : 5342
Multiples : 5342
5342 : USD 0.0763
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3378
10 : USD 0.2234
100 : USD 0.1263
1000 : USD 0.0777
3000 : USD 0.068
9000 : USD 0.0561
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Obsolete
0
MOQ : 1250
Multiples : 1
1250 : USD 0.0699
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MOQ : 1251
Multiples : 1
1251 : USD 0.0531
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MOQ : 2778
Multiples : 1
2778 : USD 0.0276
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the 3LP01M-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3LP01M-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : EN6139D 3LP01M P-Channel Small Signal MOSFET 3LP01M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I = --1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V = --10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V = --10V, I = --50mA 80 110 mS DS D R (on)1 I = --50mA, V = --4V 8 10.4 DS D GS Static Drain to Source On-State Resistance R (on)2 I = --30mA, V = --2.5V 11 15.4 DS D GS R (on)3 I = --1mA, V = --1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V = --10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs V = --10V, V = --10V, I = --100mA 0.18 nC DS GS D Gate to Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I = --100mA, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --15V DD V IN 0V --4V I = --50mA D V R =300 IN L PW=10 s D V OUT D.C.1% G 3LP01M P.G 50 S No.6139-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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