Product Information

3LP01M-TL-H

3LP01M-TL-H electronic component of ON Semiconductor

Datasheet
MOSFET SWITCHING DEVICE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1250: USD 0.0716 ea
Line Total: USD 89.5

1998 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 1250  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1998 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1250
Multiples : 1

Stock Image

3LP01M-TL-H
ON Semiconductor

1250 : USD 0.0716

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

Ordering number : EN6139D 3LP01M P-Channel Small Signal MOSFET 3LP01M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I = --1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V = --10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V = --10V, I = --50mA 80 110 mS DS D R (on)1 I = --50mA, V = --4V 8 10.4 DS D GS Static Drain to Source On-State Resistance R (on)2 I = --30mA, V = --2.5V 11 15.4 DS D GS R (on)3 I = --1mA, V = --1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V = --10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs V = --10V, V = --10V, I = --100mA 0.18 nC DS GS D Gate to Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I = --100mA, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --15V DD V IN 0V --4V I = --50mA D V R =300 IN L PW=10 s D V OUT D.C.1% G 3LP01M P.G 50 S No.6139-2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

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FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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