Product Information

3LP01SS-TL-H

3LP01SS-TL-H electronic component of ON Semiconductor

Datasheet
MOSFET HIGH FREQUENCY AMPLIFIER

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 4579
Multiples : 4579

Stock Image

3LP01SS-TL-H
ON Semiconductor

4579 : USD 0.0948
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

3LP01SS-TL-H
ON Semiconductor

1 : USD 0.4319
10 : USD 0.2767
100 : USD 0.1187
1000 : USD 0.0915
2500 : USD 0.0694
8000 : USD 0.0615
24000 : USD 0.0579
48000 : USD 0.0554
96000 : USD 0.0554
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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LOT No. LOT No. Ordering number : EN6648B 3LP01SS P-Channel Small Signal MOSFET 3LP01SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I = --1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V = --30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V = --10V, I = --100 A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V = --10V, I = --50mA 80 110 mS DS D R (on)1 I = --50mA, V = --4V 8 10.4 DS D GS Static Drain-to-Source On-State Resistance R (on)2 I = --30mA, V = --2.5V 11 15.4 DS D GS R (on)3 I = --1mA, V = --1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V = --10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate-to-Source Charge Qgs V = --10V, V = --10V, I = --100mA 0.18 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I = --100mA, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --15V DD V IN 0V --4V I = --50mA D V IN R =300 L PW=10 s D V OUT D.C.1% G 3LP01SS P.G 50 S Ordering Information Device Package Shipping memo 3LP01SS-TL-E SSFP 8,000pcs./reel Pb Free 3LP01SS-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free No.6648-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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