IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 20 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 50 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 200N15N 200N15N 200N15N 200N15N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 50 A D C T =100C 40 C 2) I T =25C 200 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =50A, R =25W 170 mJ AS D GS I =50A, V =120V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =175C j,max V Gate source voltage 20 V GS P T =25C Power dissipation 150 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.07 page 1 2014-01-09IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1 K/W thJC R minimal footprint - - 75 thJA Thermal resistance, junction - ambient 3) - - 50 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 150 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2 3 4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =120V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =50A - 16 20 mW DS(on) GS D V =8V, I =25A - 16 20 GS D Gate resistance R - 2.4 - W G V >2 I R , DS D DS(on)max g Transconductance 29 57 - S fs I =50A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.07 page 2 2014-01-09