MCH3315 Ordering number : ENN8030 P-Channel Silicon MOSFET General-Purpose Switching Device MCH3315 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --1 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --4 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 0.9 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--0.5A 0.6 1.2 S DS D R (on)1 I =--0.5A, V =--10V 580 760 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--0.3A, V =--4V 780 1100 m DS D GS Input Capacitance Ciss V =--20V, f=1MHz 180 pF DS Output Capacitance Coss V =--20V, f=1MHz 15 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 11 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 8 ns d Rise Time t See specified Test Circuit. 3 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 30 ns d Fall Time t See specified Test Circuit. 25 ns f Marking : JQ Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 MCH3315/DMCH3315 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =--30V, V =--10V, I =--1A 5 nC DS GS D Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--1A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--30V, V =--10V, I =--1A 0.8 nC DS GS D Diode Forward Voltage V I =--1A, V =0 --0.89 --1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm 2167A V = --30V V IN DD 0.3 0V 0.15 --10V 3 I = --0.5A D V IN R =60 L D V OUT PW=10s D.C.1% 2 1 0.65 G 2.0 3 (Bottom view) MCH3315 P.G 50 1 : Gate S 2 : Source 3 : Drain 12 (Top view) SANYO : MCPH3 I -- V I -- V D DS D GS --1.0 --2.0 V = --10V DS --0.9 --1.8 --0.8 --1.6 --0.7 --1.4 --0.6 --1.2 --0.5 --1.0 --0.4 --0.8 --0.3 --0.6 --0.2 --0.4 --0.1 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, V -- V IT05476 Gate-to-Source Voltage, V -- V IT05477 DS GS R (on) -- V R (on) -- Ta DS GS DS 1500 1500 Ta=25C 1400 1400 I = --0.5A D 1300 1300 1200 1200 1100 1100 1000 1000 900 900 800 700 800 600 700 500 600 400 500 300 400 200 300 100 0--2 --4---6-8--10 --12 --14 --16 --18 --20 --60 --40 --20 0 20 40 60 80 100 120 140 Gate-to-Source Voltage, V -- V IT07688 Ambient Temperature, Ta -- C IT07689 GS Rev.0 I Page 2 of 4 I www.onsemi.com V =--2.5V GS I = --0.5A, V = --10V D GS --3.0V I = --0.3A, V = --4V D GS --3.5V --4.0V --4.5V --8.0V --6.0V --10.0V 25C Ta=75C 25C --25C Ta= --25C 75C Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D 2.1 0.25 1.6 0.25 0.85 0.07 Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D