LOTNo. LOTNo. MCH3375 Power MOSFET www.onsemi.com 30V, 295m , 1.6A, Single P-Channel Features V R (on) Max I DSS DS D Max On-Resistance R (on)1=227m (typ) 295m 10V DS 4V Drive 30V 523m 4.5V 1.6A High Speed Switching and Low Loss 609m 4V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25C P-Channel Unit Parameter Symbol Value 3 Drain to Source Voltage V 30V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) I 1.6A D Drain Current (Pulse) 1 A I 6.4 DP PW10s, duty cycle1% 1:Gate Power Dissipation 2:Source 3:Drain When mounted on ceramic substrate P 0.8W D 2 2 (900mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 This product is designed to ESD immunity < 200V*, so please take care when handling. Packing Type : TL Marking * Machine Model Thermal Resistance Ratings QG Parameter Symbol Value Unit TL Junction to Ambient R 156.25 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : February 2015 - Rev. 2 MCH3375/D MCH3375 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=0.8A 1.3 S FS DS D R(on)1 I =0.8A, V=10V 227 295m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.4A, V=4.5V 374 523m DS D GS R(on)3 I =0.4A, V=4V 435 609m DS D GS Input Capacitance Ciss 82 pF Output Capacitance Coss V =10V, f=1MHz 22 pF DS Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time t (on) 4.0 ns d Rise Time t 3.3 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 12 ns d Fall Time t 5.4 ns f Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs V =15V, V =10V, I =1.6A 0.36 nC DS GS D Gate to Drain Miller Charge Qgd 0.49 nC Forward Diode Voltage V I =1.6A, V=0V 0.9 1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --15V DD IN 0V --10V I =--0.8A D V IN R =18.75 L D V OUT PW=10s D.C.1% G MCH3375 P.G 50 S www.onsemi.com 2