LOTNo. LOTNo. MCH3383 Power MOSFET 12V, 69m , 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 69m 2.5V 0.9V drive 98m 1.8V ESD Diode-Protected Gate 12V 3.5A 173m 1.2V Pb-Free, Halogen Free and RoHS compliance 500m 0.9V Typical Applications ELECTRICAL CONNECTION LED Current Balance SW P-Channel Load Switch 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit Drain to Source Voltage V 12 V DSS 1 1:Gate Gate to Source Voltage V 5V GSS 2:Source Drain Current (DC) I 3.5 A 3:Drain D Drain Current (Pulse) 2 I 14 DP A PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.0 D W 2 (900mm 0.8mm) Junction Temperature Tj 150 C QQ Operating Temperature Topr 5 to +150 C Storage Temperature Tstg 55 to +150 C TL Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 2 MCH3383/D MCH3383 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V =0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =4V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =6V, I =1mA 0.3 0.8 V GS DS D Forward Transconductance g V =6V, I =1.5A 5.3 S FS DS D R (on)1 I =1.5A, V =2.5V 57 69m DS D GS 75 98 R (on)2 I =0.7A, V =1.8V m Static Drain to Source On-State DS D GS Resistance R (on)3 I =0.3A, V =1.2V 115 173 m DS D GS R (on)4 I =50mA, V =0.9V 250 500 m DS D GS Input Capacitance Ciss 1010 pF Output Capacitance Coss 130 pF V =6V, f=1MHz DS Reverse Transfer Capacitance Crss 85 pF Turn-ON Delay Time t (on) 9.9 ns d Rise Time 49 ns t r See specified Test Circuit Turn-OFF Delay Time 109 ns t (off) d Fall Time t 65 ns f Total Gate Charge Qg 6.2 nC Gate to Source Charge Qgs 1.6 nC V =6V, V =2.5V, I =3.5A DS GS D Gate to Drain Miller Charge Qgd 1.1 nC V Forward Diode Voltage SD I =3.5A, V=0V 0.83 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--6V DD IN 0V --2.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C.1% G MCH3383 P.G 50 S www.onsemi.com 2