X-On Electronics has gained recognition as a prominent supplier of SVD5806NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVD5806NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SVD5806NT4G ON Semiconductor

SVD5806NT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.SVD5806NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 40V 33A 19MOHM
Datasheet: SVD5806NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.4105
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.7703
10 : USD 1.0399
100 : USD 0.7788
500 : USD 0.6431
1000 : USD 0.5075
2500 : USD 0.4733
5000 : USD 0.4453
10000 : USD 0.4298
N/A

Obsolete
   
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We are delighted to provide the SVD5806NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVD5806NT4G and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single NChannel, DPAK/IPAK Features Low R DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified NVD and SVD Prefix for Automotive and Other Applications V R MAX I MAX (BR)DSS DS(on) D Requiring Unique Site and Control Change Requirements 26 m 4.5 V AECQ101 Qualified and PPAP Capable 40 V 33 A 19 m 10 V These Devices are PbFree and are RoHS Compliant D Applications CCFL Backlight DC Motor Control NCHANNEL MOSFET Power Supply Secondary Side Synchronous Rectification G MAXIMUM RATINGS (T = 25C unless otherwise noted) S J Parameter Symbol Value Unit 4 DraintoSource Voltage V 40 V DSS GatetoSource Voltage Continuous V 20 V 4 GS GatetoSource Voltage V 30 V GS NonRepetitive (t < 10 S) 1 p 2 1 2 3 3 Continuous Drain T = 25C I 33 A D C DPAK IPAK Current (R ) JC Steady T = 100C 23 CASE 369C CASE 369D (Note 1) C State (Surface Mount) (Straight Lead DPAK) Power Dissipation T = 25C P 40 W C D STYLE 2 STYLE 2 (R ) (Note 1) JC Pulsed Drain Current I 67 A t = 10 s p DM MARKING DIAGRAMS Operating Junction and Storage Temperature T , T 55 to C & PIN ASSIGNMENT J stg 175 4 Drain Source Current (Body Diode) I 33 A S 4 Single Pulse DraintoSource Avalanche E 39 mJ AS Drain Energy (V = 50 V, V = 10 V, R = 25 , DD GS G I = 28 A, L = 0.1 mH, V = 40 V) L(pk) DS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the 2 device. If any of these limits are exceeded, device functionality should not be Drain assumed, damage may occur and reliability may be affected. 1 3 1 2 3 Gate Source Gate Drain Source THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location* Y = Year Parameter Symbol Value Unit WW = Work Week JunctiontoCase (Drain) R 3.7 C/W JC 5806N = Device Code JunctiontoAmbient Steady State (Note 1) R 57.5 G = PbFree Package JA 1. Surfacemounted on FR4 board using 1 in sq pad size * The Assembly Location code (A) is front side (Cu area = 1.127 in sq 1 oz including traces. optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 7 NTD5806N/D AYWW 58 06NG AYWW 58 06NG

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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