Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET BMS4007 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 75 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =75V, V =0V 10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 24V GS DS D Forward Transfer Admittance yfs V =10V, I =30A 110 S DS D Static Drain-to-Source On-State Resistance R (on) I =30A, V =10V 6 7.8 m DS D GS Input Capacitance Ciss 9700 pF Output Capacitance Coss V =20V, f=1MHz 540 pF DS Reverse Transfer Capacitance Crss 360 pF Turn-ON Delay Time t (on) 100 ns d Rise Time t 180 ns r See Fig.2 Turn-OFF Delay Time t (off) 460 ns d Fall Time t 160 ns f Total Gate Charge Qg 160 nC Gate-to-Source Charge Qgs V =48V, V =10V, I =60A 40 nC DS GS D Gate-to-Drain Miller Charge Qgd 40 nC Diode Forward Voltage V I =60A, V =0V 0.9 1.2 V SD S GS Reverse Recovery Time t See Fig.3 70 ns rr Reverse Recovery Charge Q I =60A, V =0V, di/dt=100A/ s 183 nC S GS rr Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =48V IN DD D 10V L 0V I =30A D 50 V IN R =1.6 L G D V OUT BMS4007 PW=10s D.C.1% 10V S 50 V DD 0V G BMS4007 P.G 50 S Fig.3 Reverse Recovery Time Test Circuit D BMS4007 L G S V DD Driver MOSFET No. A1820-2/5