BS107ARL1G ON Semiconductor

BS107A Small Signal MOSFET 250 mA, 200 V, NChannel TO92 Features AECQ101 Qualified and PPAP Capable BS107A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS ZeroGateVoltage Drain Current (V = 130 Vdc, V = 0) I 30 nAdc DS GS DSS DrainSource Breakdown Voltage (V = 0, I = 100 Adc) V 200 Vdc GS D (BR)DSX Gate Reverse Current (V = 15 Vdc, V = 0) I 0.01 10 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (I = 1.0 mAdc, V = V ) V 1.0 3.0 Vdc D DS GS GS(Th) Static DrainSource On Resistance r DS(on) BS107 (V = 2.6 Vdc, I = 20 mAdc) 28 GS D (V = 10 Vdc, I = 200 mAdc) 14 GS D BS107A (V = 10 Vdc) GS (I = 100 mAdc) 4.5 6.0 D (I = 250 mAdc) 4.8 6.4 D SMALLSIGNAL CHARACTERISTICS Input Capacitance C 60 pF iss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Reverse Transfer Capacitance C 6.0 pF rss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Output Capacitance C 30 pF oss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Forward Transconductance g 200 400 mmhos fs (V = 25 Vdc, I = 250 mAdc) DS D SWITCHING CHARACTERISTICS TurnOn Time t 6.0 15 ns on TurnOff Time t 12 15 ns off 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE t t 23 on off 50 INPUT 20 dB V V out PULSE GENERATOR in 50 ATTENUAT 90% 90% 40 pF OR 50 10% OUTPUT V 1 M out 50 INVERTED 90% 10 V 50% 50% PULSE WIDTH INPUT V 10% in Figure 2. Switching Waveforms Figure 1. Switching Test Circuit