DMT6015LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I D Thermally Efficient Package-Cooler Running Applications BV R DSS DS(ON) T = +25C C High Conversion Efficiency 31A 16m V = 10V GS Low R Minimizes On State Losses DS(ON) 60V 24m V = 4.5V 24A GS Low Input Capacitance Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications Description ESD Protected Gate This new generation N-Channel Enhancement Mode MOSFET is Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) designed to minimize R and yet maintain superior switching DS(ON) Halogen and Antimony Free. Green Device (Note 3) performance. This device is ideal for use in Notebook battery power management and load switch. Mechanical Data Applications Case: POWERDI 5060-8 Motor Control Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D POWERDI 5060-8 S D Pin1 S D D G S D G Gate Protection S Diode Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT6015LPS-13 POWERDI 5060-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6015LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage 16 V V GSS T = +25C 10.6 A I A D 8.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 31 C A I D 25 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 2 A I S Avalanche Current (Note 7) L=0.1mH 10 A I AS Avalanche Energy (Note 7) L=0.1mH 5 mJ E AS V Spike t=10s V 75 V DS SPIKE Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.16 W D Steady state 108 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 56 Total Power Dissipation (Note 6) 2.7 W PD Steady state 46 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 24 Thermal Resistance, Junction to Case (Note 6) 4.4 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 2.5 V V = V , I = 250A GS(TH) DS GS D 14.2 16 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 18 24 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1103 iss V = 30V, V = 0V, DS GS Output Capacitance 251.3 pF Coss f = 1MHz Reverse Transfer Capacitance 19.7 C rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1MHz G DS GS 8.9 Total Gate Charge (V = 4.5V) Q GS g 18.9 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 10A DS D Gate-Source Charge Q 3.0 gs Gate-Drain Charge Q 2.8 gd Turn-On Delay Time t 4.1 D(ON) Turn-On Rise Time t 7.1 R V = 10V, V = 30V, GS DS ns Turn-Off Delay Time t 19.5 R = 6, I = 10A D(OFF) G D Turn-Off Fall Time 8.6 tF Reverse Recovery Time 21.2 ns t RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 13.2 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 DMT6015LPS October 2015 Diodes Incorporated www.diodes.com Document number: DS37321 Rev. 3 - 2 ADVANCED INFORMATION NEW PRODUCT