DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Excellent Q R Product (FOM) gd x DS(ON) T = +25C C Advanced Technology for DC/DC converts 16m V = 10V 35A GS 80V Small form factor thermally efficient package enables higher 22m V = 6V 30A GS density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description and Applications 100% UIS (Avalanche) rated This MOSFET has been designed to minimize the on-state resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (R ) and yet maintain superior switching performance, making it DS(ON) Halogen and Antimony Free. Green Device (Note 3) ideal for high efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Synchronous Rectifier Backlighting Mechanical Data Power Management Functions DC-DC Converters Case: POWERDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (approximate) D Pin 1 S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT8012LFG-7 2,000/Tape & Reel POWERDI3333-8 DMT8012LFG-13 3,000/Tape & Reel POWERDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT8012LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 9.5 A A I D 7.6 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 35 C I A D T = +70C 28 C Maximum Continuous Body Diode Forward Current (Note 5) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 2.2 T = +25C A Total Power Dissipation (Note 5) P W D T = +25C 30 C Steady State 57 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 5) 4.2 R JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 80 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 64V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1 1.5 3 V V = V , I = 250 A GS(th) DS GS D 13 16 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) 14 22 V = 6V, I = 6A GS D Diode Forward Voltage 0.9 1.2 V V V = 0V, I = 12A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 1949 C iss V = 40V, V = 0V, DS GS Output Capacitance 177 pF C oss f = 1MHz Reverse Transfer Capacitance C 10 rss Gate resistance R 0.7 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 15 GS g Total Gate Charge (V = 10V) Q 34 GS g nC V = 40V, I = 12A DS D Gate-Source Charge Q 6 gs Gate-Drain Charge Q 4.5 gd Turn-On Delay Time 4.9 t D(on) Turn-On Rise Time 3.8 t r V = 40V, V = 10V, DD GS nS Turn-Off Delay Time 16.5 I = 12A, R = 1.6 , t D G D(off) Turn-Off Fall Time 3.5 t f Body Diode Reverse Recovery Time t 30.2 nS rr I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 34.6 nC rr Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 July 2014 DMT8012LFG Diodes Incorporated www.diodes.com Document number: DS36606 Rev. 3 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT