X-On Electronics has gained recognition as a prominent supplier of BS108ZL1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. BS108ZL1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BS108ZL1G ON Semiconductor

BS108ZL1G electronic component of ON Semiconductor
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Part No.BS108ZL1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 200V 250mA Logic Level N-Channel
Datasheet: BS108ZL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.1275 ea
Line Total: USD 255 
Availability - 0
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2000
Multiples : 1
2000 : USD 0.1275
6000 : USD 0.1263

   
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Id Continuous Drain Current
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We are delighted to provide the BS108ZL1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BS108ZL1G and other electronic components in the MOSFETs category and beyond.

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BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N Channel TO92 BS108 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DS (V = 0, I = 10 A) 200 GS D Zero Gate Voltage Drain Current I nAdc DSS (V = 130 Vdc, V = 0) 30 DSS GS GateBody Leakage Current I nAdc GSSF (V = 15 Vdc, V = 0) 10 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) (I = 1.0 mA, V = V ) 0.5 1.5 D DS GS Static DraintoSource OnResistance r  DS(on) (V = 2.0 Vdc, I = 50 mA) 10 GS D (V = 2.8 Vdc, I = 100 mA) 8.0 GS D Drain Cutoff Current I A DSX (V = 0.2 V, V = 70 V) 25 GS DS Forward Transconductance g Mhos FS (I = 120 mA, V = 20 V) 0.33 D DS DYNAMIC CHARACTERISTICS Input Capacitance C pF iss (V = 25 V, V = 0, f = 1.0 MHz) 150 DS GS Output Capacitance C pF oss (V = 25 V, V = 0, f = 1.0 MHz) 30 DS GS Reverse Transfer Capacitance C pF rss (V = 25 V, V = 0, f = 1.0 MHz) 10 DS GS SWITCHING CHARACTERISTICS TurnOn Time (See Figure 1) t 15 ns d(on) Turn Off Time (See Figure 1) t 15 ns d(off) 3. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE t t on off 23 50  INPUT 20 dB V V out in PULSE GENERATOR 90% 90% 50  ATTENUATOR 40 pF OUTPUT 50 10% V out 50 INVERTED 1.0 M 90% 10 V 50% 50% PULSE WIDTH V 10% INPUT in Figure 2. Switching Waveforms Figure 1. Switching Test Circuit

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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