BS108
Small Signal MOSFET
250 mAmps, 200 Volts,
Logic Level
N Channel TO92
BS108
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage V Vdc
(BR)DS
(V = 0, I = 10 A) 200
GS D
Zero Gate Voltage Drain Current I nAdc
DSS
(V = 130 Vdc, V = 0) 30
DSS GS
GateBody Leakage Current I nAdc
GSSF
(V = 15 Vdc, V = 0) 10
GS DS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V Vdc
GS(th)
(I = 1.0 mA, V = V ) 0.5 1.5
D DS GS
Static DraintoSource OnResistance r
DS(on)
(V = 2.0 Vdc, I = 50 mA) 10
GS D
(V = 2.8 Vdc, I = 100 mA) 8.0
GS D
Drain Cutoff Current I A
DSX
(V = 0.2 V, V = 70 V) 25
GS DS
Forward Transconductance g Mhos
FS
(I = 120 mA, V = 20 V) 0.33
D DS
DYNAMIC CHARACTERISTICS
Input Capacitance C pF
iss
(V = 25 V, V = 0, f = 1.0 MHz) 150
DS GS
Output Capacitance C pF
oss
(V = 25 V, V = 0, f = 1.0 MHz) 30
DS GS
Reverse Transfer Capacitance C pF
rss
(V = 25 V, V = 0, f = 1.0 MHz) 10
DS GS
SWITCHING CHARACTERISTICS
TurnOn Time (See Figure 1) t 15 ns
d(on)
Turn Off Time (See Figure 1) t 15 ns
d(off)
3. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE t
t
on off
23
50 INPUT
20 dB
V
V out
in
PULSE GENERATOR
90% 90%
50 ATTENUATOR
40 pF
OUTPUT
50
10%
V
out
50 INVERTED
1.0 M
90%
10 V
50%
50%
PULSE
WIDTH
V 10%
INPUT
in
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit