X-On Electronics has gained recognition as a prominent supplier of BSC009NE2LSXT MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC009NE2LSXT MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC009NE2LSXT Infineon

Name: BSC009NE2LSXT
Brand: Infineon
SKU: BSC009NE2LSXT_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSC009NE2LSXT electronic component of Infineon

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Part No.	BSC009NE2LSXT
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET OptiMOS Power MOSFET
Datasheet:	BSC009NE2LSXT Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5000: USD 1.2236 ea
Line Total: USD 6118

Availability - 0

MOQ: 5000 Multiples: 5000
Pack Size: 5000

BSC009NE2LSXT More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 06 Dec to Tue. 10 Dec MOQ : 5000 Multiples : 5000	5000 : USD 1.2236

We are delighted to provide the BSC009NE2LSXT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC009NE2LSXT and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSC009NE2LS MOSFET TM SuperSO8 OptiMOS Power-MOSFET, 25 V 5 8 6 7 Features 7 6 8 5 Optimized for e-fuse and ORing application Very low on-resistance RDS(on) VGS =4.5 V 100% avalanche tested Superior thermal resistance 4 N-channel 1 3 1) 2 2 Qualified according to JEDEC for target applications 3 1 4 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters S1 8D Parameter Value Unit S2 7D V 25 V DS S3 6D RDS(on),max 0.9 m G4 5D I 255 A D Q 38 nC OSS Q (0V..10V) 126 nC G Type / Ordering Code Package Marking Related Links BSC009NE2LS PG-TDSON-8 009NE2LS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.5, 2020-06-17TM OptiMOS Power-MOSFET, 25 V BSC009NE2LS Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.5, 2020-06-17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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CYP may also be referenced as

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CYPRESS SEMI
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Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Id - Continuous Drain Current 100 A 100 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Rds On - Drain-Source Resistance 1 mOhms 1 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 1 V 1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 96 W 96 W
Mounting Style smd/smt smd/smt
Package / Case TDSON - 8 TDSON - 8
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 168 nC 168 nC
Channel Mode enhancement enhancement
Qualification aec - q101 aec - q101
Tradename optimos optimos
Configuration single quad drain triple source single quad drain triple source
Package Case PG - TDSON - 8 PG - TDSON - 8
Series bsc009ne2 bsc009ne2
Brand Infineon Technologies Infineon Technologies
Continuous Drain Current 100 A 100 A
Drain Source Breakdown Voltage 25 V 25 V
Forward Transconductance Min 170 s 170 s
Gate Source Breakdown Voltage +/- 20 V +/- 20 V
Power Dissipation 96 W 96 W
Rds On 900 uohms 900 uohms
Fall Time 19 ns 19 ns
Gate Charge Qg 126 nC 126 nC
Rise Time 33 ns 33 ns
Factory Pack Quantity : 5000 5000
Typical Turn Off Delay Time 48 ns 48 ns
Rohs Mouser y y
Height 1.27 mm 1.27 mm
Length 5.9 mm 5.9 mm
Transistor Type 1 n - channel 1 n - channel
Width 5.15 mm 5.15 mm