Green DMTH4004SK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Rated to +175C Ideal for High Ambient Temperature BV R Max Qg Typ DSS DS(ON) T = +25C C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 40V 68.6nC 100A 3.2m V = 10V and Robust End Application GS Low R Minimizes Power Losses DS(ON) Low Qg Minimizes Switching Losses Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: TO252 Case Material: Molded Plastic, Green Molding Compound. Engine Management Systems UL Flammability Classification Rating 94V-0 Body Control Electronics Moisture Sensitivity: Level 1 per J-STD-020 DC/DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 G D G S S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMTH4004SK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4004SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 100 (Note 9) Continuous Drain Current (Note 6) I A D 100 TC = +100C Maximum Body Diode Forward Current (Note 6) 100 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 160 A I DM Avalanche Current, L=0.2mH 40 A I AS Avalanche Energy, L=0.2mH 160 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 3.9 W A D Thermal Resistance, Junction to Ambient (Note 5) 38 C/W R JA Total Power Dissipation (Note 6) T = +25C P 180 W C D Thermal Resistance, Junction to Case (Note 6) 0.8 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 2.6 3.2 m R V = 10V, I = 90A DS(ON) GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4305 iss 1441 Output Capacitance C pF V = 25V, V = 0V, f = 1MHz oss DS GS 102 Reverse Transfer Capacitance C rss 0.77 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 68.6 Total Gate Charge Q g V = 20V, I = 90A, DS D Gate-Source Charge 16.8 nC Q gs V = 10V GS Gate-Drain Charge 14.2 Q gd Turn-On Delay Time 9.5 t D(ON) Turn-On Rise Time 6.7 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 26.4 t I = 90A, R = 3.5 D(OFF) D G 8.1 Turn-Off Fall Time t F 52.4 Body Diode Reverse Recovery Time t ns RR I = 50A, di/dt = 100A/s F 78.2 Body Diode Reverse Recovery Charge Q nC RR Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to solder point (on the exposed drain pin). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. 2 of 7 DMTH4004SK3 November 2015 Diodes Incorporated www.diodes.com Document number: DS37327 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT