DMT6009LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max 100% Unclamped Inductive Switch (UIS) Test in Production D BV R max DSS DS(ON) T = +25C High Conversion Efficiency A Low R Ensures On State Losses Are Minimized DS(ON) 9.5m V = 10V 10.8A GS 60V Excellent Q x R Product (FOM) gd DS(ON) 12m V = 4.5V 9.6 GS Advanced Technology for DC-DC Converters Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state Case: SO-8 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic,Gree Molding Compound. making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (Approximate) D S D SO-8 S D G S D G D S Top View Equivalent circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT6009LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6009LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C A 10.8 A I D State 8.6 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 14.4 A t<10s I A D 11.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A DM Avalanche Current, L = 0.1mH 25 A I AS Avalanche Energy, L = 0.1mH 31.5 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.25 W D Steady State 100 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 55.5 C/W Total Power Dissipation (Note 6) 1.6 W P D Steady State 75 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 6) 12 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.7 - 2 V V = V , I = 250A GS(TH) DS GS D - 7.2 9.5 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance m R DS (ON) - 9 12 V = 4.5V, I = 11.5A GS D Diode Forward Voltage - 0.9 1.2 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 1,925 - C iss V = 30V, V = 0V, DS GS Output Capacitance - 438 - pF C oss f = 1MHz Reverse Transfer Capacitance - 41 - C rss Gate Resistance - 1.7 - R V = 0V, V = 0V, f = 1MHz G DS GS - 33.5 - Total Gate Charge (V = 10V) Q GS g 15.6 Total Gate Charge (V = 4.5V) Q - - GS g nC V = 30V, I = 13.5A DS D 4.7 Gate-Source Charge Q - - gs 5.3 Gate-Drain Charge Q - - gd 4.5 Turn-On Delay Time t - - D(ON) 8.6 Turn-On Rise Time - - tR V = 30V, V = 10V, DD GS ns Turn-Off Delay Time - 35.9 - R = 6, I = 13.5A t G D D(OFF) Turn-Off Fall Time - 15.7 - t F Body Diode Reverse Recovery Time 18.2 ns t - - RR I = 13.5A, di/dt = 400A/s F Body Diode Reverse Recovery Charge 33.1 nC Q - - RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMT6009LSS October 2015 Diodes Incorporated www.diodes.com Document number: DS38289 Rev. 1 - 2 NEW PRODUCT ADVANCE INFORMATION