DMT6007LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C C Excellent Q R Product (FOM) gd DS(ON) Advanced Technology for DC-DC Converters 6m V = 10V 80A GS Small form factor thermally efficient package enables higher 60V 8.5m V = 4.5V 70A density end products GS Occupies just 33% of the board area by enabling smaller end products Description 100% UIS (Avalanche) Rated Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Synchronous Rectifier Case: POWERDI 3333-8 Backlighting Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT6007LFG-7 2,000/Tape & Reel POWERDI 3333-8 DMT6007LFG-13 3,000/Tape & Reel POWERDI 3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT6007LFG Marking Information POWERDI 3333-8 SL6 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 ~ 53) Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 15 A I A D 12 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 80 C A I D 65 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) 80 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A DM Avalanche Current, L=0.1mH I 20 A AS Avalanche Energy, L=0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 2.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 55 C/W JA Total Power Dissipation (Note 6) T = +25C P 62.5 W C D Thermal Resistance, Junction to Case (Note 6) R 2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Short duration pulse test used to minimize self-heating effect. POWERDI is a registered trademark of Diodes Incorporated. 2 of 8 DMT6007LFG November 2015 Diodes Incorporated www.diodes.com Document number: DS37335 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION