DMT6009LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits I Max Low R Ensures On-State Losses Are Minimized D DS(ON) V R Max (BR)DSS DS(ON) T = +25C C Excellent Q x R Product (FOM) gd DS(ON) Advanced Technology for DC-DC Converters 10m V = 10V 34A GS 60V Small Form Factor Thermally Efficient Package Enables Higher 11.7m V = 4.5V 31.5A GS Density End Products 100% UIS (Avalanche) Rated Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ), yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Applications Mechanical Data Backlighting Case: POWERDI 3333-8 Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) POWERDI3333-8 D Pin 1 S S 8 1 S G 7 2 G 6 3 D D 5 4 S D D Top View Equivalent Circuit Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT6009LFG-7 2,000/Tape & Reel POWERDI3333-8 DMT6009LFG-13 3,000/Tape & Reel POWERDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6009LFG Marking Information T69 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 = 2015) WW = Week Code (01 to 53) T69 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V VDSS Gate-Source Voltage 16 V V GSS T = +25C 34 C A Continuous Drain Current (Note 5) V = 10V I GS D 27 T = +70C C T = +25C 11 A Continuous Drain Current (Note 5) V = 10V I A GS D 9 TA = +70C Maximum Continuous Body Diode Forward Current (Note 5) 2.4 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 90 A I DM Avalanche Current, L=0.1mH 28.6 A I AS Avalanche Energy, L=0.1mH 40.8 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.08 W A D Thermal Resistance, Junction to Ambient (Note 5) R 60 C/W JA Total Power Dissipation (Note 5) 19.2 W TC = +25C PD Thermal Resistance, Junction to Case (Note 5) 6.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Note: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 2 of 8 DMT6009LFG November 2015 Diodes Incorporated www.diodes.com Document number: DS37741 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT YYWW