The DMT6016LPS-13 with Diodes Incorporated MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A is a device used to control the flow of electricity between two points in an electrical system. It consists of a source, drain, and gate, as well as a substrate. The 60V N-Channel enhancement field effect transistor (FET) has a maximum power dissipation of 500W, a drain-source voltage of 60V, and a drain-source current of 8.9A. It has a low threshold voltage of 10V and a low on-resistance of 16mO. This device is manufactured by Diodes Incorporated and is suitable for use in DC motor control, audio power amplifiers, battery management systems, and USB power delivery test beds.