X-On Electronics has gained recognition as a prominent supplier of DMTH4007LK3-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH4007LK3-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH4007LK3-13 Diodes Incorporated

DMTH4007LK3-13 electronic component of Diodes Incorporated
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Part No.DMTH4007LK3-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A
Datasheet: DMTH4007LK3-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8257 ea
Line Total: USD 0.83 
Availability - 7105
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7105
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8257
10 : USD 0.682
100 : USD 0.5255
500 : USD 0.4393
1000 : USD 0.399
2500 : USD 0.3864
5000 : USD 0.3772
10000 : USD 0.3703

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMTH4007LK3-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH4007LK3-13 and other electronic components in the MOSFETs category and beyond.

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Green DMTH4007LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low R Ensures On State Losses are Minimized I Max DS(ON) D BV R Max DSS DS(ON) T = +25C C Excellent Q x R Product (FOM) gd DS(ON) Advanced Technology for DC-DC Converters 7.3m V = 10V 70A GS 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m V = 4.5V 44A GS Density End Products Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4007LK3Q) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: TO252 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.33 grams (Approximate) TO252 Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH4007LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4007LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 16.8 Continuous Drain Current, V = 10V (Note 5) I A GS D 13.9 T = +70C A T = +25C 70 C Continuous Drain Current, V = 10V (Note 6) I A GS D 51 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) I 80 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L = 0.1mH I 20 A AS Avalanche Energy, L = 0.1mH E 20 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.6 W D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) 59 W P D Thermal Resistance, Junction to Case (Note 6) 2.5 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 - - V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 - 3 V V = V , I = 250A GS(TH) DS GS D - 5 7.3 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) - 7 9.8 V = 4.5V, I = 20A GS D Diode Forward Voltage V - - 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1895 Input Capacitance C - - iss V = 30V, V = 0V, DS GS 485 Output Capacitance C - - pF oss f = 1MHz 20.9 Reverse Transfer Capacitance - - C rss Gate Resistance - 0.62 - R V = 0V, V = 0V, f = 1MHz g DS GS - 12.4 - Total Gate Charge (V = 4.5V) Q GS g - 29.1 - Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D Gate-Source Charge - 5.9 - Q gs 3.5 Gate-Drain Charge Q - - gd 5.4 Turn-On Delay Time t - - D(ON) 4.5 Turn-On Rise Time t - - R V = 30V, V = 10V, DD GS ns 16.2 Turn-Off Delay Time t - - I = 20A, R = 3 D(OFF) D G 3.5 Turn-Off Fall Time t - - F Body Diode Reverse Recovery Time - 30.6 - ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge - 28.1 - nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH4007LK3 October 2015 Diodes Incorporated www.diodes.com Document number: DS37357 Rev. 4 - 2 ADVNAENWCE PDR IONDFUOCRTM ATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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