Green DMTH4007LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low R Ensures On State Losses are Minimized I Max DS(ON) D BV R Max DSS DS(ON) T = +25C C Excellent Q x R Product (FOM) gd DS(ON) Advanced Technology for DC-DC Converters 7.3m V = 10V 70A GS 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m V = 4.5V 44A GS Density End Products Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4007LK3Q) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: TO252 resistance (R ) and yet maintain superior switching performance, DS(ON) Case Material: Molded Plastic, Green Molding Compound. making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.33 grams (Approximate) TO252 Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH4007LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4007LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 16.8 Continuous Drain Current, V = 10V (Note 5) I A GS D 13.9 T = +70C A T = +25C 70 C Continuous Drain Current, V = 10V (Note 6) I A GS D 51 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) I 80 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L = 0.1mH I 20 A AS Avalanche Energy, L = 0.1mH E 20 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.6 W D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) 59 W P D Thermal Resistance, Junction to Case (Note 6) 2.5 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 - - V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 - 3 V V = V , I = 250A GS(TH) DS GS D - 5 7.3 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) - 7 9.8 V = 4.5V, I = 20A GS D Diode Forward Voltage V - - 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1895 Input Capacitance C - - iss V = 30V, V = 0V, DS GS 485 Output Capacitance C - - pF oss f = 1MHz 20.9 Reverse Transfer Capacitance - - C rss Gate Resistance - 0.62 - R V = 0V, V = 0V, f = 1MHz g DS GS - 12.4 - Total Gate Charge (V = 4.5V) Q GS g - 29.1 - Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D Gate-Source Charge - 5.9 - Q gs 3.5 Gate-Drain Charge Q - - gd 5.4 Turn-On Delay Time t - - D(ON) 4.5 Turn-On Rise Time t - - R V = 30V, V = 10V, DD GS ns 16.2 Turn-Off Delay Time t - - I = 20A, R = 3 D(OFF) D G 3.5 Turn-Off Fall Time t - - F Body Diode Reverse Recovery Time - 30.6 - ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge - 28.1 - nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH4007LK3 October 2015 Diodes Incorporated www.diodes.com Document number: DS37357 Rev. 4 - 2 ADVNAENWCE PDR IONDFUOCRTM ATION