NVMFS6B14N Power MOSFET 100 V, 15 m , 55 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G NVMFS6B14NWF Wettable Flank Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 100 V 15 m 10 V 55 A These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5,6) DraintoSource Voltage V 100 V DSS GatetoSource Voltage V 16 V GS Continuous Drain Cur- T = 25C I 55 A C D rent R (Notes 1, 2, G (4) JC T = 100C 39 3) C Steady State Power Dissipation T = 25C P 94 W C D S (1,2,3) R (Notes 1, 2) JC T = 100C 47 C NCHANNEL MOSFET Continuous Drain Cur- T = 25C I 11 A A D rent R (Notes 1, 2, JA T = 100C 8.0 3) A Steady MARKING State DIAGRAM Power Dissipation T = 25C P 3.8 W A D R (Notes 1 & 2) JA D T = 100C 1.9 A 1 S D Pulsed Drain Current T = 25C, t = 10 s I 140 A A p DM XXXXXX DFN5 S AYWZZ Operating Junction and Storage Temperature T , T 55 to C (SO8FL) S J stg + 175 CASE 488AA G D STYLE 1 D Source Current (Body Diode) I 60 A S Single Pulse DraintoSource Avalanche E 29 mJ A = Assembly Location AS Energy (T = 25C, V = 50 V, V = 10 V, Y = Year J DD GS I = 24 A, L = 0.1 mH, R = 25 ) L(pk) G W = Work Week ZZ = Lot Traceability Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information on THERMAL RESISTANCE MAXIMUM RATINGS page 5 of this data sheet. Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 1.6 JC JunctiontoAmbient Steady State (Note 2) R 40 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2015 Rev. 0 NVMFS6B14N/DNVMFS6B14N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 80 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 80 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 8.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 12.2 15 m DS(on) GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1300 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 50 V 260 pF OSS GS DS Reverse Transfer Capacitance C 18 RSS Total Gate Charge Q 20 G(TOT) Threshold Gate Charge Q 2.2 G(TH) nC GatetoSource Charge Q 6.4 V = 10 V, V = 50 V I = 20 A GS GS DS D GatetoDrain Charge Q 6.5 GD Plateau Voltage V 5.4 V GP Gate Resistance R T = 25C 1.0 G J SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9.6 d(ON) Rise Time t 39 r V = 10 V, V = 50 V, GS DS ns I = 20 A, R = 1.0 D G TurnOff Delay Time t 16.6 d(OFF) Fall Time t 6.8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.8 J Reverse Recovery Time t 45 RR Charge Time t 23 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 20 A S Discharge Time t 22 b Reverse Recovery Charge Q 50 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2