NVMFS6B85NL Power MOSFET 100 V, 46 m , 19 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses www.onsemi.com G NVMFS6B85NLWF Wettable Flank Option for Enhanced Optical Inspection AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree and are RoHS Compliant 46 m 10 V 100 V 19 A 72 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS D (5,6) GatetoSource Voltage V 16 V GS Continuous Drain T = 25C I 19 A D C Current R JC T = 100C 14 (Notes 1, 2, 3) C Steady G (4) State Power Dissipation P W T = 25C 42 C D R (Notes 1, 2) JC T = 100C 21 C S (1,2,3) Continuous Drain T = 25C I 5.6 A A D NCHANNEL MOSFET Current R JA T = 100C 4.0 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 3.5 W D A MARKING R (Notes 1 & 2) JA DIAGRAM T = 100C 1.75 A D Pulsed Drain Current T = 25C, t = 10 s I 93 A A p DM 1 S D DFN5 Operating Junction and Storage Temperature T , T 55 to C J stg 6B85xx S + 175 (SO8FL) AYWZZ S CASE 488AA G D Source Current (Body Diode) I 32 A S STYLE 1 D Single Pulse DraintoSource Avalanche E 116 mJ AS Energy (I = 1.7 A) L(pk) 6B85NL = NVMFS6B85NL 6B85LW = NVMFS6B85NLWF Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location (1/8 from case for 10 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the W = Work Week device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information on JunctiontoCase Steady State R 3.6 C/W JC page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) 43 R JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 Rev. 0 NVMFS6B85NL/DNVMFS6B85NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 64 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 80 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.4 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J V = 10 V 37 46 GS DraintoSource On Resistance R I = 10 A m DS(on) D V = 4.5 V 55 72 GS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 480 ISS Output Capacitance C 170 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 15 RSS V = 4.5 V, V = 50 V I = 10 A 3.8 GS DS D Total Gate Charge Q G(TOT) 7.9 Threshold Gate Charge Q 1.1 nC G(TH) GatetoSource Charge Q 2.4 V = 10 V, V = 50 V I = 10 A GS GS DS D GatetoDrain Charge Q 1.1 GD Plateau Voltage V 4.0 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 6.9 d(ON) Rise Time t 66.9 r V = 4.5 V, V = 50 V, GS DS ns I = 10 A, R = 2.5 D G TurnOff Delay Time t 12.5 d(OFF) Fall Time t 55.9 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.76 J Reverse Recovery Time t 39.4 RR Charge Time t 22.7 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A Discharge Time t S 16.7 b Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2