X-On Electronics has gained recognition as a prominent supplier of NVMFS6H852NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS6H852NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS6H852NT1G ON Semiconductor

NVMFS6H852NT1G electronic component of ON Semiconductor
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Part No.NVMFS6H852NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 8 80V NFET
Datasheet: NVMFS6H852NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.8221 ea
Line Total: USD 2.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 1.1317

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.6123

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8221
10 : USD 1.0551
100 : USD 0.8015
250 : USD 0.7777
500 : USD 0.6524
1000 : USD 0.522

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMFS6H852NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS6H852NT1G and other electronic components in the MOSFETs category and beyond.

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MOSFET - Power, Single N-Channel 80 V, 14.2 m , 43 A NVMFS6H852N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFS6H852NWF Wettable Flank Option for Enhanced Optical V R MAX I MAX (BR)DSS DS(ON) D Inspection 80 V 14.2 m 10 V 43 A AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 80 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 40 A C D Current R JC S (1,2,3) T = 100C 28 (Notes 1, 3) C Steady NCHANNEL MOSFET State Power Dissipation T = 25C P 54 W C D R (Note 1) JC T = 100C 27 C MARKING Continuous Drain T = 25C I 10 A A D DIAGRAM Current R JA T = 100C 7.3 (Notes 1, 2, 3) A Steady D 1 State S D Power Dissipation T = 25C P 3.6 W A D R (Notes 1, 2) DFN5 XXXXXX JA S T = 100C 1.8 A (SO8FL) AYWZZ S CASE 488AA Pulsed Drain Current I 200 A G D T = 25C, t = 10 s A p DM STYLE 1 D Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 XXXXXX = 6H852N XXXXXX = (NVMFS6H852N) or Source Current (Body Diode) I 45 A S XXXXXX = 852NWF Single Pulse DraintoSource Avalanche E 184 mJ XXXXXX = (NVMFS6H852NWF) AS Energy (I = 2.2 A) L(pk) A = Assembly Location Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Parameter Symbol Value Unit JunctiontoCase Steady State R 2.8 C/W JC JunctiontoAmbient Steady State (Note 2) R 42 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: June, 2020 Rev. 2 NVMFS6H852N/DNVMFS6H852N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 51 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 80 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 45 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 11.8 14.2 m DS(on) GS D Forward Transconductance g V =15 V, I = 15 A 39.5 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 760 ISS Output Capacitance C 110 V = 0 V, f = 1 MHz, V = 40 V pF OSS GS DS Reverse Transfer Capacitance C 5.4 RSS Total Gate Charge Q V = 10 V, V = 40 V I = 15 A 13 G(TOT) GS DS D Threshold Gate Charge Q 2.6 G(TH) nC GatetoSource Charge Q 4.2 GS V = 10 V, V = 40 V I = 15 A GS DS D GatetoDrain Charge Q 2.3 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 24 r V = 10 V, V = 64 V, GS DS ns I = 15 A, R = 2.5 D G TurnOff Delay Time t 25 d(OFF) Fall Time t 6.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.7 J Reverse Recovery Time t 33 RR Charge Time t 22 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 15 A S Discharge Time t 11 b Reverse Recovery Charge Q 29 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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