X-On Electronics has gained recognition as a prominent supplier of NVMS4816NR2G Switching Controllers across the USA, India, Europe, Australia, and various other global locations. NVMS4816NR2G Switching Controllers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Switching Controllers, ensuring timely deliveries around the world.

NVMS4816NR2G ON Semiconductor

NVMS4816NR2G electronic component of ON Semiconductor
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Part No.NVMS4816NR2G
Manufacturer: ON Semiconductor
Category: Switching Controllers
Description: Switching Controllers AUTOMOTIVE MOSFET
Datasheet: NVMS4816NR2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1114 ea
Line Total: USD 0.11 
Availability - 0
MOQ: 1  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 2500
1 : USD 0.1114
301 : USD 0.0972
626 : USD 0.0616
1251 : USD 0.0583

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.0607

   
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We are delighted to provide the NVMS4816NR2G from our Switching Controllers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMS4816NR2G and other electronic components in the Switching Controllers category and beyond.

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4816N AYWW NTMS4816N MOSFET Power, N-Channel, SO-8 30 V, 11 A Features Low R to Minimize Conduction Losses NTMS4816N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 26 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, V = 24 V GS DS T = 100C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 9 A 8.2 10 m DS(on) GS D V = 4.5 V, I = 7.2 A 12.7 16 GS D Forward Transconductance g V = 1.5 V, I = 9 A 26 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1060 pF iss Output Capacitance C 220 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 126 rss nC Total Gate Charge Q 9.2 G(TOT) Threshold Gate Charge Q 2.4 G(TH) V = 4.5 V, V = 15 V, I = 9 A GS DS D GatetoSource Charge Q 4.4 GS GatetoDrain Charge Q 3.8 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 9 A 18.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 8.0 ns d(on) Rise Time t 3.8 r V = 10 V, V = 15 V, GS DS I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 21.6 d(off) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.0 V SD J V = 0 V, I = 2.7 A GS S T = 125C 0.55 J Reverse Recovery Time t 20 ns RR Charge Time t 9.0 a V = 0 V, d /d = 100 A/ s, GS IS t I = 2.7 A S Discharge Time t 11 b Reverse Recovery Charge Q 9.0 nC RR PACKAGE PARASITIC VALUES Source Inductance L T = 25C 0.66 nH S A Drain Inductance L T = 25C 0.20 nH D A Gate Inductance L T = 25C 1.5 nH G A Gate Resistance R T = 25C 1.5 2.3 G A

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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