MOSFET - Power, Single N-Channel 60 V, 0.68 m , 477 A NVMTS0D7N06CL Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D Power 88 Package, Industry Standard 0.68 m 10 V AECQ101 Qualified and PPAP Capable 60 V 477 A 0.90 m 4.5 V Wettable Flank Option for Enhanced Optical Inspection These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V G (1) DSS GatetoSource Voltage V 20 V GS S (24) Continuous Drain T = 25C I 477 A C D Current R JC NCHANNEL MOSFET T = 100C 337.6 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 294.6 W C D R (Note 1) JC T = 100C 147.3 C Continuous Drain T = 25C I 62.2 A A D Current R JA T = 100C 44.0 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 5.0 W A D R (Notes 1, 2) JA T = 100C 2.5 A DFNW8 Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM CASE 507AP Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 MARKING DIAGRAM Source Current (Body Diode) I 245.5 A S Single Pulse DraintoSource Avalanche E 1754 mJ AS Energy (I = 40 A) L(pk) Lead Temperature for Soldering Purposes T 260 C 0D7N06CL L (1/8 from case for 10 s) AWLYWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location WL = Wafer Lot Code THERMAL RESISTANCE MAXIMUM RATINGS Y = Year Code Parameter Symbol Value Unit WW = Work Week Code C/W JunctiontoCase Steady State R 0.5 JC JunctiontoAmbient Steady State (Note 2) R 30 JA ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, See detailed ordering, marking and shipping information in the they are not constants and are only valid for the particular conditions noted. package dimensions section on page 5 of this data sheet. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2020 Rev. 3 NVMTS0D7N06CL/DNVMTS0D7N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 16.8 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 5.63 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.52 0.68 DS(on) GS D m V = 4.5 V I = 50 A 0.69 0.90 GS D Forward Transconductance g V =15 V, I = 50 A 310 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 16200 ISS Output Capacitance C 8490 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 270 RSS Total Gate Charge Q V = 4.5 V, V = 30 V I = 50 A 103 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 30 V I = 50 A 225 G(TOT) GS DS D Threshold Gate Charge Q 21.6 nC G(TH) GatetoSource Charge Q 36.5 GS V = 10 V, V = 30 V I = 50 A GS DS D GatetoDrain Charge Q 20.7 GD Plateau Voltage V 2.46 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 35.3 d(ON) Rise Time t 26.3 r V = 10 V, V = 30 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 263 d(OFF) Fall Time t 60.7 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.67 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.59 J Reverse Recovery Time t 115 RR Charge Time t 70 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 45 b Reverse Recovery Charge Q 307 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2