MOSFET Power, Single N-Channel, Logic Level, SOT-23 60 V, 155 m NVR5198NL www.onsemi.com Features Small Footprint Industry Standard Surface Mount SOT23 Package V R TYP I MAX (BR)DSS DS(on) D Low R for Low Conduction Losses and Improved Efficiency DS(on) 155 m 10 V 60 V 2.2 A NVR Prefix for Automotive and Other Applications Requiring 205 m 4.5 V Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS NChannel Compliant D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS S Continuous Drain Steady T = 25C I 2.2 A mb D Current R State Jmb T = 100C 1.6 (Notes 1, 2, 3, and 4) mb MARKING DIAGRAM/ 3 Power Dissipation T = 25C P 1.5 W mb D PIN ASSIGNMENT R Jmb T = 100C 0.6 (Notes 1 and 3) mb Drain 1 Continuous Drain Steady T = 25C I 1.7 A 3 A D 2 State Current R JA AAL M T = 100C 1.2 (Note 1, 2, 3, and 4) A SOT23 Power Dissipation T = 25C P 0.9 W CASE 318 A D 2 1 R (Notes 1 and 3) JA STYLE 21 T = 100C 0.4 Gate A Source Pulsed Drain Current T = 25C, I 27 A A DM t =10 s AAL = Device Code p M = Date Code* Operating Junction and Storage Temperature T , 55 to C J = PbFree Package T 150 stg (Note: Microdot may be in either location) Source Current (Body Diode) I 1.9 A S *Date Code orientation may vary depending Lead Temperature for Soldering Purposes T 260 C upon manufacturing location. L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values Device Package Shipping shown, they are not constants and are only valid for the particular conditions noted. NVR5198NLT1G SOT23 3000 / 2. Psi ( ) is used as required per JESD51 12 for packages in which (PbFree) Tape & Reel substantially less than 100% of the heat flows to single case surface. NVR5198NLT3G SOT23 10000 / 3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent (PbFree) Tape & Reel on pulse duration and duty cycle. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: October, 2019 Rev. 3 NVR5198NL/DNVR5198NL THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoLead 3 Drain (Notes 2 and 3) R 86 C/W Jmb JunctiontoAmbient Steady State (Note 3) R 139 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C, I = 250 A 70 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T Reference to 25C, I = 250 A 6.5 mV/C GS(TH) J D DraintoSource OnResistance R V = 10 V, I = 1 A 107 155 m DS(on) GS D V = 4.5 V, I = 1 A 142 205 GS D Forward Transconductance g V = 5.0 V, I = 1 A 3 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 182 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 25 oss V = 25 V DS Reverse Transfer Capacitance C 16 rss Total Gate Charge Q V = 4.5 V 2.8 nC G(TOT) GS V = 48 V, DS I = 1 A D V = 10 V 5.1 GS Threshold Gate Charge Q 0.3 G(TH) GatetoSource Charge Q 0.8 GS V = 48 V, I = 1 A DS D V = 10 V GS GatetoDrain Charge Q 1.5 GD Plateau Voltage V 3.1 V GP Gate Resistance R 8 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 5 ns d(on) Rise Time t 7 r V = 30 V, V = 10 V, DS GS I = 1 A, R = 10 D G TurnOff Delay Time t 13 d(off) Fall Time t 2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 1 A S T = 125C 0.6 J Reverse Recovery Time t 12 ns rr Charge Time t 9 a I = 1 A , V = 0 V , S dc GS dc dI /dt = 100 A/ s S Discharge Time t 3 b Reverse Recovery Stored Charge Q 6 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2