X-On Electronics has gained recognition as a prominent supplier of NVTFS4C06NWFTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTFS4C06NWFTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTFS4C06NWFTAG ON Semiconductor

NVTFS4C06NWFTAG electronic component of ON Semiconductor
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Part No.NVTFS4C06NWFTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET U8FL 30V 71A 4.2MOHM
Datasheet: NVTFS4C06NWFTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.9629
N/A

Obsolete
0
MOQ : 988
Multiples : 1
988 : USD 0.3097
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4142
10 : USD 1.3807
100 : USD 1.325
500 : USD 1.2805
1000 : USD 1.158
1500 : USD 0.8117
3000 : USD 0.7984
9000 : USD 0.7717
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NVTFS4C06NWFTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTFS4C06NWFTAG and other electronic components in the MOSFETs category and beyond.

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NVTFS4C06N MOSFET Power, Single N-Channel, 8FL 30 V, 4.2 m , 71 A Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NVTFS4C06N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 14.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.4 4.2 DS(on) GS D m V = 4.5 V I = 30 A 4.9 6.1 GS D Forward Transconductance g V = 1.5 V, I = 15 A 58 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1683 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 841 pF OSS GS DS Reverse Transfer Capacitance C 40 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.023 RSS ISS GS DS Total Gate Charge Q 11.6 G(TOT) Threshold Gate Charge Q 2.6 G(TH) nC GatetoSource Charge Q 4.7 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.0 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 26 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 5.0 f TurnOn Delay Time t 8.0 d(ON) Rise Time t 28 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 24 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.63 J Reverse Recovery Time t 34 RR Charge Time t 17 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 17 b Reverse Recovery Charge Q 22 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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